TY - JOUR
T1 - Influence of gate misalignment on the electrical characteristics of MuGFETS
AU - Lee, Chi-Woo
AU - Afzalian, Aryan
AU - Ferain, Isabelle
AU - Yan, Ran
AU - Akhavan, Nima Dehdashti
AU - Xiong, Weize
AU - Colinge, Jean-Pierre
PY - 2010/3
Y1 - 2010/3
N2 - This work studies the influence of gate misalignment on the electrical properties of Multigate Field-Effect Transistors (MuGFETs) using both measurements and 3D simulations. Electrical characteristics such as a DIBL, drain breakdown voltage and hot-carrier effects are shown to be dependent on the gate misalignment due to the resulting change in effective fin width. The performances of devices that have a widening of the fin at the drain side (DW) are degraded due to weakening of gate control. Widening of the fin at the source (SW), however, does not alter the device characteristics. (C) 2009 Elsevier Ltd. All rights reserved.
AB - This work studies the influence of gate misalignment on the electrical properties of Multigate Field-Effect Transistors (MuGFETs) using both measurements and 3D simulations. Electrical characteristics such as a DIBL, drain breakdown voltage and hot-carrier effects are shown to be dependent on the gate misalignment due to the resulting change in effective fin width. The performances of devices that have a widening of the fin at the drain side (DW) are degraded due to weakening of gate control. Widening of the fin at the source (SW), however, does not alter the device characteristics. (C) 2009 Elsevier Ltd. All rights reserved.
KW - Gate misalignment
KW - Breakdown voltage
KW - Silicon-on-insulator
KW - Impact ionization
KW - Hot-carrier injection
KW - Multiple gate MOSFET
KW - VOLTAGE
U2 - 10.1016/j.sse.2009.09.001
DO - 10.1016/j.sse.2009.09.001
M3 - Article
SN - 0038-1101
VL - 54
SP - 226
EP - 230
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 3
ER -