Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots

Peng Wang; Wenwu Pan; Xiaoyan Wu; Juanjuan Liu; Chunfang Cao; Shumin Wang; Qian Gong

doi:10.1186/s11671-016-1470-1

Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots

Peng Wang, Wenwu Pan, Xiaoyan Wu, Juanjuan Liu, Chunfang Cao, Shumin Wang, Qian Gong

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum dot (QD). In addition, a remarkable PL intensity enhancement is also obtained compared with low-temperature-grown GaAs-capped InAs QD sample. The GaAsBi matrix also preserves the shape of InAs QDs and leads to increase the activation energy for nonradiative recombination process at low temperature. Lower density and larger size of InAs QDs are obtained on the GaAsBi surface compared with the QDs grown on GaAs surface.

Original language	English
Article number	280
Pages (from-to)	280
Journal	Nanoscale Research Letters
Volume	11
Issue number	1
DOIs	https://doi.org/10.1186/s11671-016-1470-1
Publication status	Published - 1 Dec 2016
Externally published	Yes

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10.1186/s11671-016-1470-1Licence: CC BY

http://adsabs.harvard.edu/abs/2016NRL....11..280W

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title = "Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots",

abstract = "InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum dot (QD). In addition, a remarkable PL intensity enhancement is also obtained compared with low-temperature-grown GaAs-capped InAs QD sample. The GaAsBi matrix also preserves the shape of InAs QDs and leads to increase the activation energy for nonradiative recombination process at low temperature. Lower density and larger size of InAs QDs are obtained on the GaAsBi surface compared with the QDs grown on GaAs surface.",

keywords = "InAs, Quantum dot, GaAsBi, MBE, Thermal stability",

author = "Peng Wang and Wenwu Pan and Xiaoyan Wu and Juanjuan Liu and Chunfang Cao and Shumin Wang and Qian Gong",

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TY - JOUR

T1 - Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots

AU - Wang, Peng

AU - Pan, Wenwu

AU - Wu, Xiaoyan

AU - Liu, Juanjuan

AU - Cao, Chunfang

AU - Wang, Shumin

AU - Gong, Qian

PY - 2016/12/1

Y1 - 2016/12/1

N2 - InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum dot (QD). In addition, a remarkable PL intensity enhancement is also obtained compared with low-temperature-grown GaAs-capped InAs QD sample. The GaAsBi matrix also preserves the shape of InAs QDs and leads to increase the activation energy for nonradiative recombination process at low temperature. Lower density and larger size of InAs QDs are obtained on the GaAsBi surface compared with the QDs grown on GaAs surface.

AB - InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum dot (QD). In addition, a remarkable PL intensity enhancement is also obtained compared with low-temperature-grown GaAs-capped InAs QD sample. The GaAsBi matrix also preserves the shape of InAs QDs and leads to increase the activation energy for nonradiative recombination process at low temperature. Lower density and larger size of InAs QDs are obtained on the GaAsBi surface compared with the QDs grown on GaAs surface.

KW - InAs

KW - Quantum dot

KW - GaAsBi

KW - MBE

KW - Thermal stability

U2 - 10.1186/s11671-016-1470-1

DO - 10.1186/s11671-016-1470-1

M3 - Article

SN - 1556-276X

VL - 11

SP - 280

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 1

M1 - 280

ER -

Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots

Abstract

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