Influence of doping in InP buffer on photoluminescence behavior of InPBi

Peng Wang, Wenwu Pan, Chunfang Cao, Xiaoyan Wu, Shumin Wang, Qian Gong

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


InP1- x Bi x epilayers with 1.0% bismuth concentration were grown on InP(001) substrates by gas-source molecular beam epitaxy. Silicon and beryllium were doped into the InP buffer layer, and their influences on the photoluminescence (PL) emission of InPBi were investigated. The PL emission of InPBi was found to be intensified by beryllium doping into the InP buffer layer. However, there was no influence of silicon doping. To investigate the reason for the PL intensity enhancement of InPBi, the carrier transport behavior at the interface was also discussed.
Original languageEnglish
Article number115503
Pages (from-to)115503
JournalJapanese Journal of Applied Physics
Issue number11
Publication statusPublished - 1 Nov 2016
Externally publishedYes


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