Influence of crystal orientation on statistical variability in p-channel Junctionless Nanowire Transistor

Nima Dehdashtiakhavan; Gregory Jolley; Gilberto Umana Membreno; Jaroslaw Antoszewski; Lorenzo Faraone

Influence of crystal orientation on statistical variability in p-channel Junctionless Nanowire Transistor

Research output: Contribution to conference › Abstract › peer-review

Abstract

We study the influence of crystal orientation on statistical variability in 10-nm gate length p-channel silicon Junctionless nanowire transistor using self-consistent three-dimensional atomistic quantum simulations based on the non-equilibrium Green’s function formalism.

Original language	English
Publication status	Published - 2014
Event	17th International Workshop on Computational Electronics (IWCE-17) - Paris, France Duration: 3 Jun 2014 → 6 Jun 2014

Conference

Conference	17th International Workshop on Computational Electronics (IWCE-17)
Country/Territory	France
City	Paris
Period	3/06/14 → 6/06/14

Cite this

@conference{be85b6eaf58c497dae2a9c8e4d486112,

title = "Influence of crystal orientation on statistical variability in p-channel Junctionless Nanowire Transistor",

abstract = "We study the influence of crystal orientation on statistical variability in 10-nm gate length p-channel silicon Junctionless nanowire transistor using self-consistent three-dimensional atomistic quantum simulations based on the non-equilibrium Green{\textquoteright}s function formalism.",

author = "Nima Dehdashtiakhavan and Gregory Jolley and \{Umana Membreno\}, Gilberto and Jaroslaw Antoszewski and Lorenzo Faraone",

year = "2014",

language = "English",

note = "17th International Workshop on Computational Electronics (IWCE-17) ; Conference date: 03-06-2014 Through 06-06-2014",

}

TY - CONF

T1 - Influence of crystal orientation on statistical variability in p-channel Junctionless Nanowire Transistor

AU - Dehdashtiakhavan, Nima

AU - Jolley, Gregory

AU - Umana Membreno, Gilberto

AU - Antoszewski, Jaroslaw

AU - Faraone, Lorenzo

PY - 2014

Y1 - 2014

N2 - We study the influence of crystal orientation on statistical variability in 10-nm gate length p-channel silicon Junctionless nanowire transistor using self-consistent three-dimensional atomistic quantum simulations based on the non-equilibrium Green’s function formalism.

AB - We study the influence of crystal orientation on statistical variability in 10-nm gate length p-channel silicon Junctionless nanowire transistor using self-consistent three-dimensional atomistic quantum simulations based on the non-equilibrium Green’s function formalism.

UR - http://www.iwcn.info/fileadmin/IWCE_cache/iwce2014/iwce2014.ief.u-psud.fr/index.html

UR - http://www.iwcn.info/browse/iwce-17/

M3 - Abstract

T2 - 17th International Workshop on Computational Electronics (IWCE-17)

Y2 - 3 June 2014 through 6 June 2014

ER -

Influence of crystal orientation on statistical variability in p-channel Junctionless Nanowire Transistor

Abstract

Conference

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