Influence of crystal orientation on statistical variability in p-channel Junctionless Nanowire Transistor

    Research output: Contribution to conferenceAbstract

    Abstract

    We study the influence of crystal orientation on statistical variability in 10-nm gate length p-channel silicon Junctionless nanowire transistor using self-consistent three-dimensional atomistic quantum simulations based on the non-equilibrium Green’s function formalism.
    Original languageEnglish
    Publication statusPublished - 2014
    Event17th International Workshop on Computational Electronics (IWCE-17) - Paris, France
    Duration: 3 Jun 20146 Jun 2014

    Conference

    Conference17th International Workshop on Computational Electronics (IWCE-17)
    CountryFrance
    CityParis
    Period3/06/146/06/14

    Fingerprint

    nanowires
    transistors
    Green's functions
    formalism
    silicon
    crystals
    simulation

    Cite this

    Dehdashtiakhavan, N., Jolley, G., Umana Membreno, G., Antoszewski, J., & Faraone, L. (2014). Influence of crystal orientation on statistical variability in p-channel Junctionless Nanowire Transistor. Abstract from 17th International Workshop on Computational Electronics (IWCE-17), Paris, France.
    @conference{be85b6eaf58c497dae2a9c8e4d486112,
    title = "Influence of crystal orientation on statistical variability in p-channel Junctionless Nanowire Transistor",
    abstract = "We study the influence of crystal orientation on statistical variability in 10-nm gate length p-channel silicon Junctionless nanowire transistor using self-consistent three-dimensional atomistic quantum simulations based on the non-equilibrium Green’s function formalism.",
    author = "Nima Dehdashtiakhavan and Gregory Jolley and {Umana Membreno}, Gilberto and Jaroslaw Antoszewski and Lorenzo Faraone",
    year = "2014",
    language = "English",
    note = "17th International Workshop on Computational Electronics (IWCE-17) ; Conference date: 03-06-2014 Through 06-06-2014",

    }

    Dehdashtiakhavan, N, Jolley, G, Umana Membreno, G, Antoszewski, J & Faraone, L 2014, 'Influence of crystal orientation on statistical variability in p-channel Junctionless Nanowire Transistor' 17th International Workshop on Computational Electronics (IWCE-17), Paris, France, 3/06/14 - 6/06/14, .

    Influence of crystal orientation on statistical variability in p-channel Junctionless Nanowire Transistor. / Dehdashtiakhavan, Nima; Jolley, Gregory; Umana Membreno, Gilberto; Antoszewski, Jaroslaw; Faraone, Lorenzo.

    2014. Abstract from 17th International Workshop on Computational Electronics (IWCE-17), Paris, France.

    Research output: Contribution to conferenceAbstract

    TY - CONF

    T1 - Influence of crystal orientation on statistical variability in p-channel Junctionless Nanowire Transistor

    AU - Dehdashtiakhavan, Nima

    AU - Jolley, Gregory

    AU - Umana Membreno, Gilberto

    AU - Antoszewski, Jaroslaw

    AU - Faraone, Lorenzo

    PY - 2014

    Y1 - 2014

    N2 - We study the influence of crystal orientation on statistical variability in 10-nm gate length p-channel silicon Junctionless nanowire transistor using self-consistent three-dimensional atomistic quantum simulations based on the non-equilibrium Green’s function formalism.

    AB - We study the influence of crystal orientation on statistical variability in 10-nm gate length p-channel silicon Junctionless nanowire transistor using self-consistent three-dimensional atomistic quantum simulations based on the non-equilibrium Green’s function formalism.

    UR - http://www.iwcn.info/fileadmin/IWCE_cache/iwce2014/iwce2014.ief.u-psud.fr/index.html

    UR - http://www.iwcn.info/browse/iwce-17/

    M3 - Abstract

    ER -

    Dehdashtiakhavan N, Jolley G, Umana Membreno G, Antoszewski J, Faraone L. Influence of crystal orientation on statistical variability in p-channel Junctionless Nanowire Transistor. 2014. Abstract from 17th International Workshop on Computational Electronics (IWCE-17), Paris, France.