Influence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors

Jean-Pierre Colinge, Aryan Afzalian, Chi-Woo Lee, Ran Yan, Nima Dehdashti Akhavan

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The minimum energy of the first conduction subband varies with gate voltage in trigate silicon-on-insulator metal-oxide-silicon field-effect transistors (MOSFETs) in subthreshold operation. In an inversion-mode trigate device, the energy level of the lowest subband increases with electron concentration, while it decreases under the same conditions in some accumulation-mode devices. As a result of this quantum effect, the subthreshold swing of accumulation-mode trigate FETs is smaller than predicted by classical theory. This effect is not observed in fin-shaped FETs and gate-all-around MOSFETs and can be amplified by modifying the device cross section. (C) 2008 American Institute of Physics.

Original languageEnglish
Article number133511
Number of pages3
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 31 Mar 2008

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