Indium Phosphide Bismide

Liyao Zhang, Wenwu Pan, Xiaoyan Wu, Li Yue, Shumin Wang

Research output: Chapter in Book/Conference paperChapter

Abstract

Indium phosphide bismide is a new member to the dilute bismide family. Since the first synthesis by molecular beam epitaxy (MBE) in 2013, it has cut a figure for its abnormal properties comparing with other dilute bismides. Bismuth (Bi) incorporation is always a difficulty for epitaxial growth of dilute. In this chapter, it shows how to regulate MBE growth parameters and their influence on Bi incorporation in InP1-xBix. Structural, electronic and optical properties are systematically reviewed. Thermal annealing to study Bi thermal stability and its effect on physical properties is performed. InP1-xBix shows strong and broad photoluminescence at room temperature, which is a potential candidate for fabricating super-luminescence diodes applied for enhancing spatial resolution in optical coherence tomography. Quaternary phosphide bismide, including InGaPBi and InAlPBi, is briefly introduced in this chapter.

Original languageEnglish
Title of host publicationProgress in Metallic Alloys
EditorsVadim Glebovsky
PublisherInTechOpen
Pages221-245
Number of pages25
ISBN (Electronic)978-953-51-2697-3
ISBN (Print)978-953-51-2696-6
DOIs
Publication statusPublished - 2016
Externally publishedYes

Cite this

Zhang, L., Pan, W., Wu, X., Yue, L., & Wang, S. (2016). Indium Phosphide Bismide. In V. Glebovsky (Ed.), Progress in Metallic Alloys (pp. 221-245). InTechOpen. https://doi.org/10.5772/64565