Indium phosphide bismide is a new member to the dilute bismide family. Since the first synthesis by molecular beam epitaxy (MBE) in 2013, it has cut a figure for its abnormal properties comparing with other dilute bismides. Bismuth (Bi) incorporation is always a difficulty for epitaxial growth of dilute. In this chapter, it shows how to regulate MBE growth parameters and their influence on Bi incorporation in InP1-xBix. Structural, electronic and optical properties are systematically reviewed. Thermal annealing to study Bi thermal stability and its effect on physical properties is performed. InP1-xBix shows strong and broad photoluminescence at room temperature, which is a potential candidate for fabricating super-luminescence diodes applied for enhancing spatial resolution in optical coherence tomography. Quaternary phosphide bismide, including InGaPBi and InAlPBi, is briefly introduced in this chapter.
|Title of host publication||Progress in Metallic Alloys|
|Number of pages||25|
|Publication status||Published - 2016|