Indium Phosphide Bismide

Liyao Zhang; Wenwu Pan; Xiaoyan Wu; Li Yue; Shumin Wang

doi:10.5772/64565

Indium Phosphide Bismide

Liyao Zhang, Wenwu Pan, Xiaoyan Wu, Li Yue, Shumin Wang

Research output: Chapter in Book/Conference paper › Chapter › peer-review

Abstract

Indium phosphide bismide is a new member to the dilute bismide family. Since the first synthesis by molecular beam epitaxy (MBE) in 2013, it has cut a figure for its abnormal properties comparing with other dilute bismides. Bismuth (Bi) incorporation is always a difficulty for epitaxial growth of dilute. In this chapter, it shows how to regulate MBE growth parameters and their influence on Bi incorporation in InP1-xBix. Structural, electronic and optical properties are systematically reviewed. Thermal annealing to study Bi thermal stability and its effect on physical properties is performed. InP1-xBix shows strong and broad photoluminescence at room temperature, which is a potential candidate for fabricating super-luminescence diodes applied for enhancing spatial resolution in optical coherence tomography. Quaternary phosphide bismide, including InGaPBi and InAlPBi, is briefly introduced in this chapter.

Original language	English
Title of host publication	Progress in Metallic Alloys
Editors	Vadim Glebovsky
Publisher	InTechOpen
Pages	221-245
Number of pages	25
ISBN (Electronic)	978-953-51-2697-3
ISBN (Print)	978-953-51-2696-6
DOIs	https://doi.org/10.5772/64565
Publication status	Published - 2016
Externally published	Yes

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10.5772/64565Licence: CC BY

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title = "Indium Phosphide Bismide",

abstract = "Indium phosphide bismide is a new member to the dilute bismide family. Since the first synthesis by molecular beam epitaxy (MBE) in 2013, it has cut a figure for its abnormal properties comparing with other dilute bismides. Bismuth (Bi) incorporation is always a difficulty for epitaxial growth of dilute. In this chapter, it shows how to regulate MBE growth parameters and their influence on Bi incorporation in InP1-xBix. Structural, electronic and optical properties are systematically reviewed. Thermal annealing to study Bi thermal stability and its effect on physical properties is performed. InP1-xBix shows strong and broad photoluminescence at room temperature, which is a potential candidate for fabricating super-luminescence diodes applied for enhancing spatial resolution in optical coherence tomography. Quaternary phosphide bismide, including InGaPBi and InAlPBi, is briefly introduced in this chapter.",

keywords = "InP1-xBix, MBE, structure property, electronic property, optical property, thermal stability, OPTICAL COHERENCE TOMOGRAPHY, MOLECULAR-BEAM EPITAXY, VAPOR-PHASE EPITAXY, GAAS1-XBIX, TEMPERATURE, GROWTH, ALLOY",

author = "Liyao Zhang and Wenwu Pan and Xiaoyan Wu and Li Yue and Shumin Wang",

year = "2016",

doi = "10.5772/64565",

language = "English",

isbn = "978-953-51-2696-6",

pages = "221--245",

editor = "Vadim Glebovsky",

booktitle = "Progress in Metallic Alloys",

publisher = "InTechOpen",

}

TY - CHAP

T1 - Indium Phosphide Bismide

AU - Zhang, Liyao

AU - Pan, Wenwu

AU - Wu, Xiaoyan

AU - Yue, Li

AU - Wang, Shumin

PY - 2016

Y1 - 2016

N2 - Indium phosphide bismide is a new member to the dilute bismide family. Since the first synthesis by molecular beam epitaxy (MBE) in 2013, it has cut a figure for its abnormal properties comparing with other dilute bismides. Bismuth (Bi) incorporation is always a difficulty for epitaxial growth of dilute. In this chapter, it shows how to regulate MBE growth parameters and their influence on Bi incorporation in InP1-xBix. Structural, electronic and optical properties are systematically reviewed. Thermal annealing to study Bi thermal stability and its effect on physical properties is performed. InP1-xBix shows strong and broad photoluminescence at room temperature, which is a potential candidate for fabricating super-luminescence diodes applied for enhancing spatial resolution in optical coherence tomography. Quaternary phosphide bismide, including InGaPBi and InAlPBi, is briefly introduced in this chapter.

AB - Indium phosphide bismide is a new member to the dilute bismide family. Since the first synthesis by molecular beam epitaxy (MBE) in 2013, it has cut a figure for its abnormal properties comparing with other dilute bismides. Bismuth (Bi) incorporation is always a difficulty for epitaxial growth of dilute. In this chapter, it shows how to regulate MBE growth parameters and their influence on Bi incorporation in InP1-xBix. Structural, electronic and optical properties are systematically reviewed. Thermal annealing to study Bi thermal stability and its effect on physical properties is performed. InP1-xBix shows strong and broad photoluminescence at room temperature, which is a potential candidate for fabricating super-luminescence diodes applied for enhancing spatial resolution in optical coherence tomography. Quaternary phosphide bismide, including InGaPBi and InAlPBi, is briefly introduced in this chapter.

KW - InP1-xBix

KW - MBE

KW - structure property

KW - electronic property

KW - optical property

KW - thermal stability

KW - OPTICAL COHERENCE TOMOGRAPHY

KW - MOLECULAR-BEAM EPITAXY

KW - VAPOR-PHASE EPITAXY

KW - GAAS1-XBIX

KW - TEMPERATURE

KW - GROWTH

KW - ALLOY

U2 - 10.5772/64565

DO - 10.5772/64565

M3 - Chapter

SN - 978-953-51-2696-6

SP - 221

EP - 245

BT - Progress in Metallic Alloys

A2 - Glebovsky, Vadim

PB - InTechOpen

ER -

Indium Phosphide Bismide

Abstract

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