Research into p-type doping of HgCdTe with arsenic has concentrated on the use of a conventional effusion cell and optimization of growth conditions to achieve an increase in incorporation efficiency. This study investigates the use of a cracker cell, which is now the preferred method of doping HgCdTe due to its higher arsenic incorporation efficiency under optimum growth conditions. A detailed investigation of a number of arsenic doped HgCdTe layers grown on CdZnTe substrates by molecular beam epitaxy using a cracker cell as a source of arsenic is presented. Growth parameters influencing the amount of arsenic incorporated, such as the cracker-cell bulk temperature and substrate temperature, were investigated. Arsenic depth profiles were obtained via detailed secondary ion mass spectrometry where all major constituents in the epilayers were analysed. Magneto-transport Hall measurements were performed on as-grown material and those that underwent high-temperature anneals typical for arsenic activation. Using the quantitative mobility spectrum analysis technique, contributions to total conductivity arising from various carriers present in the samples have been separated. As-grown samples were found to exhibit n-type behaviour consistent with arsenic incorporating on cation sublattice, while samples that underwent high-temperature annealing show partial activation of arsenic with electron compensation.