TY - JOUR
T1 - InAs-mediated growth of vertical InSb nanowires on Si substrates
AU - Li, T.
AU - Gao, L.
AU - Lei, Wen
AU - Guo, L.
AU - Pan, H.
AU - Yang, T.
AU - Chen, Y.
AU - Wang, Z.
PY - 2013
Y1 - 2013
N2 - In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end, while the other, in contrast, ends without Indium droplet but with pyramid-shaped InSb. The indium-droplet-ended nanowires are longer than the other group of nanowires. For both groups of InSb nanowires, InAs layers play an important role in their formation by serving as a template for growing InSb nanowires. The results presented in this work suggest a useful approach to grow catalyst-free InSb nanowires on Si substrates, which is significant for their device applications. © 2013 Li et al.
AB - In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end, while the other, in contrast, ends without Indium droplet but with pyramid-shaped InSb. The indium-droplet-ended nanowires are longer than the other group of nanowires. For both groups of InSb nanowires, InAs layers play an important role in their formation by serving as a template for growing InSb nanowires. The results presented in this work suggest a useful approach to grow catalyst-free InSb nanowires on Si substrates, which is significant for their device applications. © 2013 Li et al.
U2 - 10.1186/1556-276X-8-333
DO - 10.1186/1556-276X-8-333
M3 - Article
C2 - 23883403
SN - 1931-7573
VL - 8
SP - 6pp
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
IS - 1
ER -