In-plane magnetic-field effect on transport properties of the chiral edge state in a quasi-three-dimensional quantum well structure

B. Zhang, J. Brooks, Z. Wang, J. Simmons, J. Reno, N. E. Lumpkin, Jeremy O'Brien, R. Clark

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The transport properties of a quasi-three-dimensional, 200-layer quantum-well structure are investigated at integer filling in the quantum Hall state, concomitant with the chiral edge state condition. We find that the transverse magnetoresistance (Formula presented) the Hall resistance (Formula presented) and the vertical resistance (Formula presented) all follow a similar behavior with both temperature and in-plane magnetic field. A general characteristic of the influence of increasing in-plane field (Formula presented) is that the quantization condition first improves, but above a critical value (Formula presented) the quantization is systematically removed. We consider the interplay of the chiral edge state transport and the bulk (quantum Hall) transport properties. This mechanism may arise from the competition of the cyclotron energy with the superlattice band-structure energies. A comparison of the results with existing theories of the chiral edge state transport with in-plane field is also discussed.

Original languageEnglish
Pages (from-to)8743-8747
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number12
DOIs
Publication statusPublished - 1999
Externally publishedYes

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