In-Ga intermixing in low-temperature grown GaAs delta doped with In

N. A. Bert; V. V. Chaldyshev; Yu G. Musikhin; A. A. Suvorova; V. V. Preobrazhenskii; M. A. Putyato; B. R. Semyagin; P. Werner

doi:10.1063/1.123576

In-Ga intermixing in low-temperature grown GaAs delta doped with In

N. A. Bert, V. V. Chaldyshev, Yu G. Musikhin, A. A. Suvorova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, P. Werner

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Abstract

Low-temperature grown GaAs films with indium delta layers are studied by transmission electron microscopy. The delta layers in the as-grown film are found to be as thick as four monolayers (ML) independently of a nominal In deposit of 0.5 or 1 ML, a thickness which reflects the film surface roughness during the low-temperature growth. A pronounced In-Ga intermixing is observed in the films subjected to 500-700 °C isochronal anneals. The In-Ga interdiffusion diffusivity is evaluated. The effective activation energy for In-Ga interdiffusion is found to be 1.1±0.3eV which is significantly smaller than a value of 1.93 eV for a stoichiometric GaAs. The difference seems to result from a loss of the gallium vacancy supersaturation upon annealing, and is consistent with an annihilation enthalpy of 0.8 eV.

Original language	English
Pages (from-to)	1442-1444
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	10
DOIs	https://doi.org/10.1063/1.123576
Publication status	Published - 8 Mar 1999
Externally published	Yes

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title = "In-Ga intermixing in low-temperature grown GaAs delta doped with In",

abstract = "Low-temperature grown GaAs films with indium delta layers are studied by transmission electron microscopy. The delta layers in the as-grown film are found to be as thick as four monolayers (ML) independently of a nominal In deposit of 0.5 or 1 ML, a thickness which reflects the film surface roughness during the low-temperature growth. A pronounced In-Ga intermixing is observed in the films subjected to 500-700 °C isochronal anneals. The In-Ga interdiffusion diffusivity is evaluated. The effective activation energy for In-Ga interdiffusion is found to be 1.1±0.3eV which is significantly smaller than a value of 1.93 eV for a stoichiometric GaAs. The difference seems to result from a loss of the gallium vacancy supersaturation upon annealing, and is consistent with an annihilation enthalpy of 0.8 eV.",

author = "Bert, {N. A.} and Chaldyshev, {V. V.} and Musikhin, {Yu G.} and Suvorova, {A. A.} and Preobrazhenskii, {V. V.} and Putyato, {M. A.} and Semyagin, {B. R.} and P. Werner",

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T1 - In-Ga intermixing in low-temperature grown GaAs delta doped with In

AU - Bert, N. A.

AU - Chaldyshev, V. V.

AU - Musikhin, Yu G.

AU - Suvorova, A. A.

AU - Preobrazhenskii, V. V.

AU - Putyato, M. A.

AU - Semyagin, B. R.

AU - Werner, P.

PY - 1999/3/8

Y1 - 1999/3/8

N2 - Low-temperature grown GaAs films with indium delta layers are studied by transmission electron microscopy. The delta layers in the as-grown film are found to be as thick as four monolayers (ML) independently of a nominal In deposit of 0.5 or 1 ML, a thickness which reflects the film surface roughness during the low-temperature growth. A pronounced In-Ga intermixing is observed in the films subjected to 500-700 °C isochronal anneals. The In-Ga interdiffusion diffusivity is evaluated. The effective activation energy for In-Ga interdiffusion is found to be 1.1±0.3eV which is significantly smaller than a value of 1.93 eV for a stoichiometric GaAs. The difference seems to result from a loss of the gallium vacancy supersaturation upon annealing, and is consistent with an annihilation enthalpy of 0.8 eV.

AB - Low-temperature grown GaAs films with indium delta layers are studied by transmission electron microscopy. The delta layers in the as-grown film are found to be as thick as four monolayers (ML) independently of a nominal In deposit of 0.5 or 1 ML, a thickness which reflects the film surface roughness during the low-temperature growth. A pronounced In-Ga intermixing is observed in the films subjected to 500-700 °C isochronal anneals. The In-Ga interdiffusion diffusivity is evaluated. The effective activation energy for In-Ga interdiffusion is found to be 1.1±0.3eV which is significantly smaller than a value of 1.93 eV for a stoichiometric GaAs. The difference seems to result from a loss of the gallium vacancy supersaturation upon annealing, and is consistent with an annihilation enthalpy of 0.8 eV.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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In-Ga intermixing in low-temperature grown GaAs delta doped with In

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