Improving phototransistor performance with polymer-quantum dot hybrid technology

Herein, the infrared photodetection performance of the HgTe quantum dots embedded in a polymer matrix was studied using an FDTD solution. The role of P3HT polymer in the hybrid structure was investigated by focusing on optical enhancements. The simulation explored critical parameters such as photo absorption capabilities, electric field distribution, and electrical generation rate. Also, the effect of phase separation level on device performance was studied by changing the quantum dot cluster size. A phototransistor was fabricated using the hybrid structure with silver electrodes to examine the theoretical works. Incorporating P3HT polymer into the active medium of the device showed significant improvement in current density value at room temperature.