Abstract
In this work we show that junctionless nanowire transistor (JNT) exhibits lower degree of ballisticity in subthreshold and higher ballisticity above threshold compare to conventional inversion-mode transistors, according to quantum mechanical simulations. The lower degradation of the ballisticity above threshold region gives the JNT near-ballistic transport performance and hence a high current drive. On the other hand, lower ballisticity in subthreshold region helps reducing the off-current and improves the subthreshold slope. A three-dimensional quantum mechanical device simulator based on the nonequilibrium Green's function formalism in the uncoupled mode-space approach has been developed to extract the physical parameters of the devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3559625]
Original language | English |
---|---|
Article number | 103510 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 98 |
Issue number | 10 |
DOIs | |
Publication status | Published - 7 Mar 2011 |
Externally published | Yes |