Improvement of carrier ballisticity in junctionless nanowire transistors

Nima Dehdashti Akhavan, Isabelle Ferain, Pedram Razavi, Ran Yu, Jean-Pierre Colinge

Research output: Contribution to journalArticlepeer-review

49 Citations (Scopus)

Abstract

In this work we show that junctionless nanowire transistor (JNT) exhibits lower degree of ballisticity in subthreshold and higher ballisticity above threshold compare to conventional inversion-mode transistors, according to quantum mechanical simulations. The lower degradation of the ballisticity above threshold region gives the JNT near-ballistic transport performance and hence a high current drive. On the other hand, lower ballisticity in subthreshold region helps reducing the off-current and improves the subthreshold slope. A three-dimensional quantum mechanical device simulator based on the nonequilibrium Green's function formalism in the uncoupled mode-space approach has been developed to extract the physical parameters of the devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3559625]

Original languageEnglish
Article number103510
Number of pages3
JournalApplied Physics Letters
Volume98
Issue number10
DOIs
Publication statusPublished - 7 Mar 2011
Externally publishedYes

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