Improved Hydrogen Depth Profiles with In-Chamber Annealing of Hydrogenated Amorphous Silicon Thin Films

R. Ruther, John Livingstone, J. Dytlewski, D. Cohen

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have undertaken a study on the influence of deposition temperature and an in-chamber annealing treatment on the hydrogen depth profiles of sputter-deposited hydrogenated amorphous silicon (a-Si:H) thin films. Our results show that for higher temperature deposition (285-300 degrees C), which leads to a lower degree of hydrogen incorporation, very steep hydrogen distribution profiles resulted. The hydrogen content at the film-substrate interface of such films can be similar to 2/3 of that at the film's surface. It is believed that a strong hydrogen outdiffusion from the bulk took place during film growth at those relatively high temperatures. When an in situ in-chamber annealing treatment was carried out just after deposition and before samples reached room temperature, hydrogen distribution through the film thickness showed a more homogeneous profile. Moreover, the resultant films appeared to be more dense when samples were subjected to this treatment in an atomic hydrogen atmosphere. (C) 1996 American Institute of Physics.
Original languageEnglish
Pages (from-to)175-180
JournalJournal of Applied Physics
Volume1
DOIs
Publication statusPublished - 1996

Fingerprint Dive into the research topics of 'Improved Hydrogen Depth Profiles with In-Chamber Annealing of Hydrogenated Amorphous Silicon Thin Films'. Together they form a unique fingerprint.

Cite this