Hole Transport in Arsenic-Doped Hg1-xCd xTe with x = 0.5

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    Abstract

    © 2016, The Minerals, Metals & Materials Society.Hole transport in arsenic-doped p-type Hg1-xCdxTe epitaxial layers with x = 0.5 has been studied employing Hall-effect measurements and theoretical modeling of hole scattering mechanisms. The hole transport parameters extracted from four different Hg1-xCdxTe films with x = 0.50, 0.56–0.58, 0.65, and 0.80, were analyzed using an iterative solution of Boltzmann’s transport equation. Hole mobilities in the samples with x values of 0.5 and 0.56–0.58 were found to be predominantly limited by ionized impurity scattering, and exhibited relatively high impurity compensation ratios =2. The sample with x = 0.65 exhibited the highest hole mobility, a low compensation ratio of 1.05, and mobility characteristics were limited predominantly by polar optical phonon scattering at temperatures =200 K. Hole mobility in the sample with x = 0.80 was found to be limited by polar optical phonon scattering and ionized impurity scattering (compensation ratio 1.20–1.56). Although the sample temperatures employed were not sufficiently low to unambiguously discriminate the scattering strength of static strain and dislocations, the experimental hole mobility characteristics cannot be adequately modeled if these two mechanisms are neglected. The ionization energy of the arsenic acceptor impurities was found to exhibit a quadratic dependence on the CdTe mole fraction.
    Original languageEnglish
    Pages (from-to)4686-4691
    Number of pages6
    JournalJournal of Electronic Materials
    Volume45
    Issue number9
    DOIs
    Publication statusPublished - 2016

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    Hole mobility
    Arsenic
    arsenic
    hole mobility
    Scattering
    Impurities
    Phonon scattering
    scattering
    impurities
    Ionization potential
    Epitaxial layers
    Hall effect
    Minerals
    iterative solution
    Metals
    Temperature
    minerals
    Compensation and Redress
    ionization
    temperature

    Cite this

    @article{65066ebcbd1a437b99e533cda92279cb,
    title = "Hole Transport in Arsenic-Doped Hg1-xCd xTe with x = 0.5",
    abstract = "{\^A}{\circledC} 2016, The Minerals, Metals & Materials Society.Hole transport in arsenic-doped p-type Hg1-xCdxTe epitaxial layers with x{\^A} ={\^A} 0.5 has been studied employing Hall-effect measurements and theoretical modeling of hole scattering mechanisms. The hole transport parameters extracted from four different Hg1-xCdxTe films with x = 0.50, 0.56–0.58, 0.65, and 0.80, were analyzed using an iterative solution of Boltzmann’s transport equation. Hole mobilities in the samples with x values of 0.5 and 0.56–0.58 were found to be predominantly limited by ionized impurity scattering, and exhibited relatively high impurity compensation ratios =2. The sample with x = 0.65 exhibited the highest hole mobility, a low compensation ratio of 1.05, and mobility characteristics were limited predominantly by polar optical phonon scattering at temperatures =200 K. Hole mobility in the sample with x = 0.80 was found to be limited by polar optical phonon scattering and ionized impurity scattering (compensation ratio 1.20–1.56). Although the sample temperatures employed were not sufficiently low to unambiguously discriminate the scattering strength of static strain and dislocations, the experimental hole mobility characteristics cannot be adequately modeled if these two mechanisms are neglected. The ionization energy of the arsenic acceptor impurities was found to exhibit a quadratic dependence on the CdTe mole fraction.",
    author = "Umana-Membreno, {Gilberto A. A.} and Hemendra Kala and S. Bains and Akhavan, {Nima D.} and Jarek Antoszewski and C.D. Maxey and Lorenzo Faraone",
    year = "2016",
    doi = "10.1007/s11664-016-4474-9",
    language = "English",
    volume = "45",
    pages = "4686--4691",
    journal = "Journal of Electronic Materials",
    issn = "0361-5235",
    publisher = "Springer",
    number = "9",

    }

    TY - JOUR

    T1 - Hole Transport in Arsenic-Doped Hg1-xCd xTe with x = 0.5

    AU - Umana-Membreno, Gilberto A. A.

    AU - Kala, Hemendra

    AU - Bains, S.

    AU - Akhavan, Nima D.

    AU - Antoszewski, Jarek

    AU - Maxey, C.D.

    AU - Faraone, Lorenzo

    PY - 2016

    Y1 - 2016

    N2 - © 2016, The Minerals, Metals & Materials Society.Hole transport in arsenic-doped p-type Hg1-xCdxTe epitaxial layers with x = 0.5 has been studied employing Hall-effect measurements and theoretical modeling of hole scattering mechanisms. The hole transport parameters extracted from four different Hg1-xCdxTe films with x = 0.50, 0.56–0.58, 0.65, and 0.80, were analyzed using an iterative solution of Boltzmann’s transport equation. Hole mobilities in the samples with x values of 0.5 and 0.56–0.58 were found to be predominantly limited by ionized impurity scattering, and exhibited relatively high impurity compensation ratios =2. The sample with x = 0.65 exhibited the highest hole mobility, a low compensation ratio of 1.05, and mobility characteristics were limited predominantly by polar optical phonon scattering at temperatures =200 K. Hole mobility in the sample with x = 0.80 was found to be limited by polar optical phonon scattering and ionized impurity scattering (compensation ratio 1.20–1.56). Although the sample temperatures employed were not sufficiently low to unambiguously discriminate the scattering strength of static strain and dislocations, the experimental hole mobility characteristics cannot be adequately modeled if these two mechanisms are neglected. The ionization energy of the arsenic acceptor impurities was found to exhibit a quadratic dependence on the CdTe mole fraction.

    AB - © 2016, The Minerals, Metals & Materials Society.Hole transport in arsenic-doped p-type Hg1-xCdxTe epitaxial layers with x = 0.5 has been studied employing Hall-effect measurements and theoretical modeling of hole scattering mechanisms. The hole transport parameters extracted from four different Hg1-xCdxTe films with x = 0.50, 0.56–0.58, 0.65, and 0.80, were analyzed using an iterative solution of Boltzmann’s transport equation. Hole mobilities in the samples with x values of 0.5 and 0.56–0.58 were found to be predominantly limited by ionized impurity scattering, and exhibited relatively high impurity compensation ratios =2. The sample with x = 0.65 exhibited the highest hole mobility, a low compensation ratio of 1.05, and mobility characteristics were limited predominantly by polar optical phonon scattering at temperatures =200 K. Hole mobility in the sample with x = 0.80 was found to be limited by polar optical phonon scattering and ionized impurity scattering (compensation ratio 1.20–1.56). Although the sample temperatures employed were not sufficiently low to unambiguously discriminate the scattering strength of static strain and dislocations, the experimental hole mobility characteristics cannot be adequately modeled if these two mechanisms are neglected. The ionization energy of the arsenic acceptor impurities was found to exhibit a quadratic dependence on the CdTe mole fraction.

    U2 - 10.1007/s11664-016-4474-9

    DO - 10.1007/s11664-016-4474-9

    M3 - Article

    VL - 45

    SP - 4686

    EP - 4691

    JO - Journal of Electronic Materials

    JF - Journal of Electronic Materials

    SN - 0361-5235

    IS - 9

    ER -