TY - JOUR
T1 - High-yield synthesis of silicon carbide nanowires by solar and lamp ablation
AU - Lu, H.
AU - Chan, B.C.Y.
AU - Wang, X.
AU - Chua, Hui
AU - Raston, Colin
AU - Albu-Yaron, A.
AU - Levy, M.
AU - Popowitz-Biro, R.
AU - Tenne, R.
AU - Feuermann, D.
AU - Gordon, J.M.
PY - 2013
Y1 - 2013
N2 - We report a reasonably high yield (∼50%) synthesis of silicon carbide (SiC) nanowires from silicon oxides and carbon in vacuum, by novel solar and lamp photothermal ablation methods that obviate the need for catalysis, and allow relatively short reaction times (∼10 min) in a nominally one-step process that does not involve toxic reagents. The one-dimensional core/shell β-SiC/SiOx nanostructures - characterized by SEM, TEM, HRTEM, SAED, XRD and EDS - are typically several microns long, with core and outer diameters of about 10 and 30 nm, respectively. HRTEM revealed additional distinctive nanoscale structures that also shed light on the formation pathways. © 2013 IOP Publishing Ltd.
AB - We report a reasonably high yield (∼50%) synthesis of silicon carbide (SiC) nanowires from silicon oxides and carbon in vacuum, by novel solar and lamp photothermal ablation methods that obviate the need for catalysis, and allow relatively short reaction times (∼10 min) in a nominally one-step process that does not involve toxic reagents. The one-dimensional core/shell β-SiC/SiOx nanostructures - characterized by SEM, TEM, HRTEM, SAED, XRD and EDS - are typically several microns long, with core and outer diameters of about 10 and 30 nm, respectively. HRTEM revealed additional distinctive nanoscale structures that also shed light on the formation pathways. © 2013 IOP Publishing Ltd.
UR - https://www.scopus.com/pages/publications/84881162932
U2 - 10.1088/0957-4484/24/33/335603
DO - 10.1088/0957-4484/24/33/335603
M3 - Article
C2 - 23881269
SN - 0957-4484
VL - 24
SP - 7pp
JO - Nanotechnology
JF - Nanotechnology
IS - 33
ER -