Abstract
The solar-blind detection capability of heterostructure diodes employing an i-Al0.33Ga0.67N layer sandwiched between two doped GaN layers is investigated via simulations using MEDICI. It is shown that the introduction of quantum features? such as InGaN quantum wells and delta-doped regions of p-Al0.33Ga0.67N, can successfully suppress the current due to photogeneration in the low-bandgap GaN regions, leading to UV/solar rejection ratios of over three orders of magnitude.
Original language | English |
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Pages (from-to) | 486-489 |
Journal | IEEE Transactions on Electron Devices |
Volume | 48 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2001 |