High UV/Solar Rejection Ratios in GaN/AlGaN/GaN P-I-N Photodiodes

D.L. Pulfrey; J.J. Kuek; M.P. Leslie; Brett Nener; Giacinta Parish; U.K. Mishra; P. Kozodoy; E.J. Tarsa

doi:10.1109/16.906440

High UV/Solar Rejection Ratios in GaN/AlGaN/GaN P-I-N Photodiodes

D.L. Pulfrey, J.J. Kuek, M.P. Leslie, Brett Nener, Giacinta Parish, U.K. Mishra, P. Kozodoy, E.J. Tarsa

Graduate Research School

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The solar-blind detection capability of heterostructure diodes employing an i-Al0.33Ga0.67N layer sandwiched between two doped GaN layers is investigated via simulations using MEDICI. It is shown that the introduction of quantum features? such as InGaN quantum wells and delta-doped regions of p-Al0.33Ga0.67N, can successfully suppress the current due to photogeneration in the low-bandgap GaN regions, leading to UV/solar rejection ratios of over three orders of magnitude.

Original language	English
Pages (from-to)	486-489
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	3
DOIs	https://doi.org/10.1109/16.906440
Publication status	Published - 2001

Access to Document

10.1109/16.906440

Cite this

@article{6c8b7d761c1440059badbb7c65336735,

title = "High UV/Solar Rejection Ratios in GaN/AlGaN/GaN P-I-N Photodiodes",

abstract = "The solar-blind detection capability of heterostructure diodes employing an i-Al0.33Ga0.67N layer sandwiched between two doped GaN layers is investigated via simulations using MEDICI. It is shown that the introduction of quantum features? such as InGaN quantum wells and delta-doped regions of p-Al0.33Ga0.67N, can successfully suppress the current due to photogeneration in the low-bandgap GaN regions, leading to UV/solar rejection ratios of over three orders of magnitude.",

author = "D.L. Pulfrey and J.J. Kuek and M.P. Leslie and Brett Nener and Giacinta Parish and U.K. Mishra and P. Kozodoy and E.J. Tarsa",

year = "2001",

doi = "10.1109/16.906440",

language = "English",

volume = "48",

pages = "486--489",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

number = "3",

}

TY - JOUR

T1 - High UV/Solar Rejection Ratios in GaN/AlGaN/GaN P-I-N Photodiodes

AU - Pulfrey, D.L.

AU - Kuek, J.J.

AU - Leslie, M.P.

AU - Nener, Brett

AU - Parish, Giacinta

AU - Mishra, U.K.

AU - Kozodoy, P.

AU - Tarsa, E.J.

PY - 2001

Y1 - 2001

N2 - The solar-blind detection capability of heterostructure diodes employing an i-Al0.33Ga0.67N layer sandwiched between two doped GaN layers is investigated via simulations using MEDICI. It is shown that the introduction of quantum features? such as InGaN quantum wells and delta-doped regions of p-Al0.33Ga0.67N, can successfully suppress the current due to photogeneration in the low-bandgap GaN regions, leading to UV/solar rejection ratios of over three orders of magnitude.

AB - The solar-blind detection capability of heterostructure diodes employing an i-Al0.33Ga0.67N layer sandwiched between two doped GaN layers is investigated via simulations using MEDICI. It is shown that the introduction of quantum features? such as InGaN quantum wells and delta-doped regions of p-Al0.33Ga0.67N, can successfully suppress the current due to photogeneration in the low-bandgap GaN regions, leading to UV/solar rejection ratios of over three orders of magnitude.

U2 - 10.1109/16.906440

DO - 10.1109/16.906440

M3 - Article

VL - 48

SP - 486

EP - 489

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 3

ER -

High UV/Solar Rejection Ratios in GaN/AlGaN/GaN P-I-N Photodiodes

Abstract

Access to Document

Fingerprint

Cite this