High UV/Solar Rejection Ratios in GaN/AlGaN/GaN P-I-N Photodiodes

D.L. Pulfrey, J.J. Kuek, M.P. Leslie, Brett Nener, Giacinta Parish, U.K. Mishra, P. Kozodoy, E.J. Tarsa

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The solar-blind detection capability of heterostructure diodes employing an i-Al0.33Ga0.67N layer sandwiched between two doped GaN layers is investigated via simulations using MEDICI. It is shown that the introduction of quantum features? such as InGaN quantum wells and delta-doped regions of p-Al0.33Ga0.67N, can successfully suppress the current due to photogeneration in the low-bandgap GaN regions, leading to UV/solar rejection ratios of over three orders of magnitude.
Original languageEnglish
Pages (from-to)486-489
JournalIEEE Transactions on Electron Devices
Issue number3
Publication statusPublished - 2001


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