The solar-blind detection capability of heterostructure diodes employing an i-Al0.33Ga0.67N layer sandwiched between two doped GaN layers is investigated via simulations using MEDICI. It is shown that the introduction of quantum features? such as InGaN quantum wells and delta-doped regions of p-Al0.33Ga0.67N, can successfully suppress the current due to photogeneration in the low-bandgap GaN regions, leading to UV/solar rejection ratios of over three orders of magnitude.
Pulfrey, D. L., Kuek, J. J., Leslie, M. P., Nener, B., Parish, G., Mishra, U. K., ... Tarsa, E. J. (2001). High UV/Solar Rejection Ratios in GaN/AlGaN/GaN P-I-N Photodiodes. IEEE Transactions on Electron Devices, 48(3), 486-489. https://doi.org/10.1109/16.906440