The solar-blind detection capability of heterostructure diodes employing an i-Al0.33Ga0.67N layer sandwiched between two doped GaN layers is investigated via simulations using MEDICI. It is shown that the introduction of quantum features? such as InGaN quantum wells and delta-doped regions of p-Al0.33Ga0.67N, can successfully suppress the current due to photogeneration in the low-bandgap GaN regions, leading to UV/solar rejection ratios of over three orders of magnitude.
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 2001|