High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts

Ching Hui Chen, Stacia Keller, Gia Parish, Ramakrishna Vetury, Peter Kozodoy, Evelyn L. Hu, Steven P. Denbaars, Umesh K. Mishra, Yifeng Wu

Research output: Contribution to journalArticlepeer-review

70 Citations (Scopus)

Abstract

Self-aligned AlGaN/GaN modulation-doped field-effect transistors (MODFETs) with high transconductances have been demonstrated on a sapphire substrate. Source and drain were selectively regrown with ∼1700 Å of n-GaN adjacent to the gate electrode. Source resistance was reduced to 0.95 mm from 1.4 to 1.8 mm with conventional GaN-based MODFETs. These self-aligned devices show a record high value of extrinsic transconductance ∼400 mS/mm for AlGaN/GaN MODFETs with a gate length of 1.2 μm.

Original languageEnglish
Pages (from-to)3147-3149
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number21
DOIs
Publication statusPublished - 1 Dec 1998
Externally publishedYes

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