High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts

Ching Hui Chen; Stacia Keller; Gia Parish; Ramakrishna Vetury; Peter Kozodoy; Evelyn L. Hu; Steven P. Denbaars; Umesh K. Mishra; Yifeng Wu

doi:10.1063/1.122701

High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts

Ching Hui Chen, Stacia Keller, Gia Parish, Ramakrishna Vetury, Peter Kozodoy, Evelyn L. Hu, Steven P. Denbaars, Umesh K. Mishra, Yifeng Wu

Research output: Contribution to journal › Article › peer-review

75 Citations (Scopus)

Abstract

Self-aligned AlGaN/GaN modulation-doped field-effect transistors (MODFETs) with high transconductances have been demonstrated on a sapphire substrate. Source and drain were selectively regrown with ∼1700 Å of n-GaN adjacent to the gate electrode. Source resistance was reduced to 0.95 mm from 1.4 to 1.8 mm with conventional GaN-based MODFETs. These self-aligned devices show a record high value of extrinsic transconductance ∼400 mS/mm for AlGaN/GaN MODFETs with a gate length of 1.2 μm.

Original language	English
Pages (from-to)	3147-3149
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	21
DOIs	https://doi.org/10.1063/1.122701
Publication status	Published - 1 Dec 1998
Externally published	Yes

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@article{93887acc62c44fc88ac84d3f2193b733,

title = "High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts",

abstract = "Self-aligned AlGaN/GaN modulation-doped field-effect transistors (MODFETs) with high transconductances have been demonstrated on a sapphire substrate. Source and drain were selectively regrown with ∼1700 {\AA} of n-GaN adjacent to the gate electrode. Source resistance was reduced to 0.95 mm from 1.4 to 1.8 mm with conventional GaN-based MODFETs. These self-aligned devices show a record high value of extrinsic transconductance ∼400 mS/mm for AlGaN/GaN MODFETs with a gate length of 1.2 μm.",

author = "Chen, {Ching Hui} and Stacia Keller and Gia Parish and Ramakrishna Vetury and Peter Kozodoy and Hu, {Evelyn L.} and Denbaars, {Steven P.} and Mishra, {Umesh K.} and Yifeng Wu",

year = "1998",

month = dec,

day = "1",

doi = "10.1063/1.122701",

language = "English",

volume = "73",

pages = "3147--3149",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts

AU - Chen, Ching Hui

AU - Keller, Stacia

AU - Parish, Gia

AU - Vetury, Ramakrishna

AU - Kozodoy, Peter

AU - Hu, Evelyn L.

AU - Denbaars, Steven P.

AU - Mishra, Umesh K.

AU - Wu, Yifeng

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Self-aligned AlGaN/GaN modulation-doped field-effect transistors (MODFETs) with high transconductances have been demonstrated on a sapphire substrate. Source and drain were selectively regrown with ∼1700 Å of n-GaN adjacent to the gate electrode. Source resistance was reduced to 0.95 mm from 1.4 to 1.8 mm with conventional GaN-based MODFETs. These self-aligned devices show a record high value of extrinsic transconductance ∼400 mS/mm for AlGaN/GaN MODFETs with a gate length of 1.2 μm.

AB - Self-aligned AlGaN/GaN modulation-doped field-effect transistors (MODFETs) with high transconductances have been demonstrated on a sapphire substrate. Source and drain were selectively regrown with ∼1700 Å of n-GaN adjacent to the gate electrode. Source resistance was reduced to 0.95 mm from 1.4 to 1.8 mm with conventional GaN-based MODFETs. These self-aligned devices show a record high value of extrinsic transconductance ∼400 mS/mm for AlGaN/GaN MODFETs with a gate length of 1.2 μm.

UR - http://www.scopus.com/inward/record.url?scp=0032561602&partnerID=8YFLogxK

U2 - 10.1063/1.122701

DO - 10.1063/1.122701

M3 - Article

AN - SCOPUS:0032561602

SN - 0003-6951

VL - 73

SP - 3147

EP - 3149

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts

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