High-Temperature Performance of Silicon Junctionless MOSFETs

Chi-Woo Lee, Adrien Borne, Isabelle Ferain, Aryan Afzalian, Ran Yan, Nima Dehdashti Akhavan, Pedram Razavi, Jean-Pierre Colinge

Research output: Contribution to journalArticlepeer-review

371 Citations (Scopus)


This paper investigates the temperature dependence of the main electrical parameters of junctionless (JL) silicon nanowire transistors. Direct comparison is made to silicon nanowire (trigate) MOSFETs. Variation of parameters such as threshold voltage and ON-OFF current characteristics is analyzed. The JL silicon nanowire FET has a lager variation of threshold voltage with temperature than the standard inversion- and accumulation-mode FETs. Unlike in classical devices, the drain current of JL FETs increases when temperature is increased.

Original languageEnglish
Pages (from-to)620-625
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number3
Publication statusPublished - Mar 2010


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