High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETs

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@article{8f230d28d5cc43029749c7e8eece3cab,

title = "High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETs",

author = "{Umana Membreno}, {Gilberto A.} and S.-J. Chang and M. Bawedin and Jarek Antoszewski and S Cristoloveanu and Lorenzo Faraone",

year = "2015",

doi = "10.1016/j.sse.2015.05.022",

language = "English",

volume = "113",

pages = "109--115",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Pergamon",

}

TY - JOUR

T1 - High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETs

AU - Umana Membreno, Gilberto A.

AU - Chang, S.-J.

AU - Bawedin, M.

AU - Antoszewski, Jarek

AU - Cristoloveanu, S

AU - Faraone, Lorenzo

PY - 2015

Y1 - 2015

U2 - 10.1016/j.sse.2015.05.022

DO - 10.1016/j.sse.2015.05.022

M3 - Article

VL - 113

SP - 109

EP - 115

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

ER -