High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETs

Gilberto A. Umana Membreno, S.-J. Chang, M. Bawedin, Jarek Antoszewski, S Cristoloveanu, Lorenzo Faraone

    Research output: Contribution to journalArticle

    Original languageEnglish
    Pages (from-to)109-115
    JournalSolid-State Electronics
    Volume113
    DOIs
    Publication statusPublished - 2015

    Cite this

    @article{8f230d28d5cc43029749c7e8eece3cab,
    title = "High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETs",
    author = "{Umana Membreno}, {Gilberto A.} and S.-J. Chang and M. Bawedin and Jarek Antoszewski and S Cristoloveanu and Lorenzo Faraone",
    year = "2015",
    doi = "10.1016/j.sse.2015.05.022",
    language = "English",
    volume = "113",
    pages = "109--115",
    journal = "Solid-State Electronics",
    issn = "0038-1101",
    publisher = "Pergamon",

    }

    High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETs. / Umana Membreno, Gilberto A.; Chang, S.-J.; Bawedin, M.; Antoszewski, Jarek; Cristoloveanu, S; Faraone, Lorenzo.

    In: Solid-State Electronics, Vol. 113, 2015, p. 109-115.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETs

    AU - Umana Membreno, Gilberto A.

    AU - Chang, S.-J.

    AU - Bawedin, M.

    AU - Antoszewski, Jarek

    AU - Cristoloveanu, S

    AU - Faraone, Lorenzo

    PY - 2015

    Y1 - 2015

    U2 - 10.1016/j.sse.2015.05.022

    DO - 10.1016/j.sse.2015.05.022

    M3 - Article

    VL - 113

    SP - 109

    EP - 115

    JO - Solid-State Electronics

    JF - Solid-State Electronics

    SN - 0038-1101

    ER -