High performance high density gas-FET array in standard CMOS

Qian Yu; Xiaopeng Zhong; Farid Boussaid; Amine Bermak; Cy Tsui

doi:10.1109/VLSIT.2018.8510700

High performance high density gas-FET array in standard CMOS

Qian Yu
, Xiaopeng Zhong
, Farid Boussaid
, Amine Bermak
, Cy Tsui

School of Engineering

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

7 Citations (Scopus)

Abstract

New gas sensitive FET (Gas-FET) structures are proposed to enable standard CMOS fabrication of high performance high density gas sensor arrays that are fully integrated with their associated circuitry. The performance of the proposed Gas-FET structures was investigated by fabricating an 8×8 Gas-FET array comprising 45μm×46μm sensing elements. Room temperature sub-ppm acetone sensing capability is demonstrated for non-invasive diabetes diagnosis through exhaled human breath. Performance comparison shows that the fabricated array boasts superior sensitivity while enabling ultra-low power operation at room temperature, with over 3 orders magnitude reduction in power consumption compared to previously reported standard CMOS resistive gas sensors.

Original language	English
Title of host publication	2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018
Place of Publication	USA
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	39-40
Number of pages	2
Volume	2018-June
ISBN (Electronic)	9781538642160
DOIs	https://doi.org/10.1109/VLSIT.2018.8510700
Publication status	Published - 25 Oct 2018
Event	38th IEEE Symposium on VLSI Technology, VLSI Technology 2018 - Honolulu, United States Duration: 18 Jun 2018 → 22 Jun 2018

Conference

Conference	38th IEEE Symposium on VLSI Technology, VLSI Technology 2018
Country/Territory	United States
City	Honolulu
Period	18/06/18 → 22/06/18

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 3 Good Health and Well-being

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10.1109/VLSIT.2018.8510700

Cite this

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title = "High performance high density gas-FET array in standard CMOS",

abstract = "New gas sensitive FET (Gas-FET) structures are proposed to enable standard CMOS fabrication of high performance high density gas sensor arrays that are fully integrated with their associated circuitry. The performance of the proposed Gas-FET structures was investigated by fabricating an 8×8 Gas-FET array comprising 45μm×46μm sensing elements. Room temperature sub-ppm acetone sensing capability is demonstrated for non-invasive diabetes diagnosis through exhaled human breath. Performance comparison shows that the fabricated array boasts superior sensitivity while enabling ultra-low power operation at room temperature, with over 3 orders magnitude reduction in power consumption compared to previously reported standard CMOS resistive gas sensors.",

author = "Qian Yu and Xiaopeng Zhong and Farid Boussaid and Amine Bermak and Cy Tsui",

year = "2018",

month = oct,

day = "25",

doi = "10.1109/VLSIT.2018.8510700",

language = "English",

volume = "2018-June",

pages = "39--40",

booktitle = "2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States",

note = "38th IEEE Symposium on VLSI Technology, VLSI Technology 2018 ; Conference date: 18-06-2018 Through 22-06-2018",

}

Yu, Q, Zhong, X, Boussaid, F, Bermak, A & Tsui, C 2018, High performance high density gas-FET array in standard CMOS. in 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018. vol. 2018-June, 8510700, IEEE, Institute of Electrical and Electronics Engineers, USA, pp. 39-40, 38th IEEE Symposium on VLSI Technology, VLSI Technology 2018, Honolulu, Hawaii, United States, 18/06/18. https://doi.org/10.1109/VLSIT.2018.8510700

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AU - Yu, Qian

AU - Zhong, Xiaopeng

AU - Boussaid, Farid

AU - Bermak, Amine

AU - Tsui, Cy

PY - 2018/10/25

Y1 - 2018/10/25

N2 - New gas sensitive FET (Gas-FET) structures are proposed to enable standard CMOS fabrication of high performance high density gas sensor arrays that are fully integrated with their associated circuitry. The performance of the proposed Gas-FET structures was investigated by fabricating an 8×8 Gas-FET array comprising 45μm×46μm sensing elements. Room temperature sub-ppm acetone sensing capability is demonstrated for non-invasive diabetes diagnosis through exhaled human breath. Performance comparison shows that the fabricated array boasts superior sensitivity while enabling ultra-low power operation at room temperature, with over 3 orders magnitude reduction in power consumption compared to previously reported standard CMOS resistive gas sensors.

AB - New gas sensitive FET (Gas-FET) structures are proposed to enable standard CMOS fabrication of high performance high density gas sensor arrays that are fully integrated with their associated circuitry. The performance of the proposed Gas-FET structures was investigated by fabricating an 8×8 Gas-FET array comprising 45μm×46μm sensing elements. Room temperature sub-ppm acetone sensing capability is demonstrated for non-invasive diabetes diagnosis through exhaled human breath. Performance comparison shows that the fabricated array boasts superior sensitivity while enabling ultra-low power operation at room temperature, with over 3 orders magnitude reduction in power consumption compared to previously reported standard CMOS resistive gas sensors.

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U2 - 10.1109/VLSIT.2018.8510700

DO - 10.1109/VLSIT.2018.8510700

M3 - Conference paper

AN - SCOPUS:85056846720

VL - 2018-June

SP - 39

EP - 40

BT - 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - USA

T2 - 38th IEEE Symposium on VLSI Technology, VLSI Technology 2018

Y2 - 18 June 2018 through 22 June 2018

ER -

High performance high density gas-FET array in standard CMOS

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