High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN

G. Parish; S. Keller; P. Kozodoy; J. P. Ibbetson; H. Marchand; P. T. Fini; S. B. Fleischer; S. P. DenBaars; U. K. Mishra; E. J. Tarsa

doi:10.1063/1.124337

High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, E. J. Tarsa

Research output: Contribution to journal › Article › peer-review

329 Citations (Scopus)

Abstract

A solar-blind photovoltaic AlGaN-based detectors fabricated on lateral epitaxial overgrown (LEO) GaN were demonstrated. Decay times as low as 4.5 ns were measured. Peak responsivities were as high as 0.05 A/W at 285 nm. Leakage current densities were as low as 10 nA/cm² at -5 V. Diodes fabricated on dislocated GaN exhibited much higher leakage currents, as well as increased sub-band-gap spectral response.

Original language	English
Pages (from-to)	247-249
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	2
DOIs	https://doi.org/10.1063/1.124337
Publication status	Published - 12 Jul 1999
Externally published	Yes

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10.1063/1.124337

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title = "High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN",

abstract = "A solar-blind photovoltaic AlGaN-based detectors fabricated on lateral epitaxial overgrown (LEO) GaN were demonstrated. Decay times as low as 4.5 ns were measured. Peak responsivities were as high as 0.05 A/W at 285 nm. Leakage current densities were as low as 10 nA/cm2 at -5 V. Diodes fabricated on dislocated GaN exhibited much higher leakage currents, as well as increased sub-band-gap spectral response.",

author = "G. Parish and S. Keller and P. Kozodoy and Ibbetson, {J. P.} and H. Marchand and Fini, {P. T.} and Fleischer, {S. B.} and DenBaars, {S. P.} and Mishra, {U. K.} and Tarsa, {E. J.}",

year = "1999",

month = jul,

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doi = "10.1063/1.124337",

language = "English",

volume = "75",

pages = "247--249",

journal = "Applied Physics Letters",

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T1 - High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN

AU - Parish, G.

AU - Keller, S.

AU - Kozodoy, P.

AU - Ibbetson, J. P.

AU - Marchand, H.

AU - Fini, P. T.

AU - Fleischer, S. B.

AU - DenBaars, S. P.

AU - Mishra, U. K.

AU - Tarsa, E. J.

PY - 1999/7/12

Y1 - 1999/7/12

N2 - A solar-blind photovoltaic AlGaN-based detectors fabricated on lateral epitaxial overgrown (LEO) GaN were demonstrated. Decay times as low as 4.5 ns were measured. Peak responsivities were as high as 0.05 A/W at 285 nm. Leakage current densities were as low as 10 nA/cm2 at -5 V. Diodes fabricated on dislocated GaN exhibited much higher leakage currents, as well as increased sub-band-gap spectral response.

AB - A solar-blind photovoltaic AlGaN-based detectors fabricated on lateral epitaxial overgrown (LEO) GaN were demonstrated. Decay times as low as 4.5 ns were measured. Peak responsivities were as high as 0.05 A/W at 285 nm. Leakage current densities were as low as 10 nA/cm2 at -5 V. Diodes fabricated on dislocated GaN exhibited much higher leakage currents, as well as increased sub-band-gap spectral response.

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DO - 10.1063/1.124337

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SP - 247

EP - 249

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN

Abstract

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