High breakdown GaNHEMT with overlapping gate structure

NQ Zhang; S Keller; Giacinta Parish; S Heikman; SP Denbaars; UK Mishra

doi:10.1109/55.863096

High breakdown GaNHEMT with overlapping gate structure

NQ Zhang, S Keller, Giacinta Parish, S Heikman, SP Denbaars, UK Mishra

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232 Citations (Web of Science)

Abstract

GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown high dielectric constant dielectric. The overlapping structure reduces the electric field at the drain-side gate edge, thus creasing the breakdown of the device. A record-high three-terminal breakdown figure of 570 V was achieved on a HEMT with a gate-drain spacing of 13 mu m. The source-drain saturation current Is 500 mA/mm and the extrinsic transconductance 150 mS/mm.

Original language	English
Pages (from-to)	421-423
Journal	IEEE Electron Device Letters
Volume	21
DOIs	https://doi.org/10.1109/55.863096
Publication status	Published - 2000

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title = "High breakdown GaNHEMT with overlapping gate structure",

abstract = "GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown high dielectric constant dielectric. The overlapping structure reduces the electric field at the drain-side gate edge, thus creasing the breakdown of the device. A record-high three-terminal breakdown figure of 570 V was achieved on a HEMT with a gate-drain spacing of 13 mu m. The source-drain saturation current Is 500 mA/mm and the extrinsic transconductance 150 mS/mm.",

author = "NQ Zhang and S Keller and Giacinta Parish and S Heikman and SP Denbaars and UK Mishra",

year = "2000",

doi = "10.1109/55.863096",

language = "English",

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pages = "421--423",

journal = "IEEE Electron Device Letters",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

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T1 - High breakdown GaNHEMT with overlapping gate structure

AU - Zhang, NQ

AU - Keller, S

AU - Parish, Giacinta

AU - Heikman, S

AU - Denbaars, SP

AU - Mishra, UK

PY - 2000

Y1 - 2000

N2 - GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown high dielectric constant dielectric. The overlapping structure reduces the electric field at the drain-side gate edge, thus creasing the breakdown of the device. A record-high three-terminal breakdown figure of 570 V was achieved on a HEMT with a gate-drain spacing of 13 mu m. The source-drain saturation current Is 500 mA/mm and the extrinsic transconductance 150 mS/mm.

AB - GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown high dielectric constant dielectric. The overlapping structure reduces the electric field at the drain-side gate edge, thus creasing the breakdown of the device. A record-high three-terminal breakdown figure of 570 V was achieved on a HEMT with a gate-drain spacing of 13 mu m. The source-drain saturation current Is 500 mA/mm and the extrinsic transconductance 150 mS/mm.

U2 - 10.1109/55.863096

DO - 10.1109/55.863096

M3 - Article

VL - 21

SP - 421

EP - 423

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

High breakdown GaNHEMT with overlapping gate structure

Abstract

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