Abstract
GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectric. The overlapping structure reduces the electric field at the drain-side gate edge, thus increasing the breakdown of the device. A record-high three-terminal breakdown figure of 570 V was achieved on a HEMT with a gate-drain spacing of 13 μm. The source-drain saturation current was 500 mA/mm and the extrinsic transconductance 150 mS/mm.
Original language | English |
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Pages (from-to) | 373-375 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 21 |
Issue number | 9 |
Publication status | Published - 1 Sept 2000 |
Externally published | Yes |