High breakdown GaN HEMT with overlapping gate structure

N. Q. Zhang, S. Keller, G. Parish, S. Heikman, S. P. DenBaars, U. K. Mishra

Research output: Contribution to journalArticle

90 Citations (Scopus)


GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectric. The overlapping structure reduces the electric field at the drain-side gate edge, thus increasing the breakdown of the device. A record-high three-terminal breakdown figure of 570 V was achieved on a HEMT with a gate-drain spacing of 13 μm. The source-drain saturation current was 500 mA/mm and the extrinsic transconductance 150 mS/mm.

Original languageEnglish
Pages (from-to)373-375
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
Publication statusPublished - 1 Sep 2000
Externally publishedYes

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