High breakdown GaN HEMT with overlapping gate structure

N. Q. Zhang, S. Keller, G. Parish, S. Heikman, S. P. DenBaars, U. K. Mishra

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GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectric. The overlapping structure reduces the electric field at the drain-side gate edge, thus increasing the breakdown of the device. A record-high three-terminal breakdown figure of 570 V was achieved on a HEMT with a gate-drain spacing of 13 μm. The source-drain saturation current was 500 mA/mm and the extrinsic transconductance 150 mS/mm.

Original languageEnglish
Pages (from-to)373-375
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
Publication statusPublished - 1 Sep 2000
Externally publishedYes


Cite this

Zhang, N. Q., Keller, S., Parish, G., Heikman, S., DenBaars, S. P., & Mishra, U. K. (2000). High breakdown GaN HEMT with overlapping gate structure. IEEE Electron Device Letters, 21(9), 373-375.