Heteroepitaxy growth of GaAsBi on Ge(100) substrate by gas source molecular beam epitaxy

Chemistry

• Molecular Beam Epitaxy 100%
• Single Crystalline Solid 50%
• Surfactant 50%
• Raman Spectrum 50%
• Interdiffusion 50%
• Phonon 50%
• Misfit Dislocation 50%

Physics

• Molecular Beam Epitaxy 100%
• Single Crystals 50%
• Raman Spectra 50%

Material Science

• Single Crystal 50%
• Gallium Arsenide 50%
• Surface Active Agent 50%
• Heteroepitaxy 50%