Heteroepitaxy growth of GaAsBi on Ge(100) substrate by gas source molecular beam epitaxy

Peng Wang; Wenwu Pan; Xiaoyan Wu; Chunfang Cao; Shumin Wang; Qian Gong

doi:10.7567/APEX.9.045502

Heteroepitaxy growth of GaAsBi on Ge(100) substrate by gas source molecular beam epitaxy

Peng Wang, Wenwu Pan, Xiaoyan Wu, Chunfang Cao, Shumin Wang, Qian Gong

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We have investigated the growth of GaAsBi single-crystal film on Ge substrate by gas source molecular beam epitaxy. A high-quality GaAsBi epilayer has been obtained. It has been found that the surfactant effect of Bi suppresses the interdiffusion of Ge at the GaAsBi/Ge interface and reduces the misfit dislocation density. The Bi atoms occupy the As sites, as indicated by the appearance of GaBi-like TO(Γ) and LO(Γ) phonon modes in Raman spectra. In addition, the redshift of the GaAs-like LO(Γ) phonon frequency has been observed in the Raman spectra, owing to the Bi-induced biaxial strain and the alloying effect as well.

Original language	English
Article number	45502
Pages (from-to)	45502
Journal	Applied Physics Express
Volume	9
Issue number	4
DOIs	https://doi.org/10.7567/APEX.9.045502
Publication status	Published - 1 Apr 2016
Externally published	Yes

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http://adsabs.harvard.edu/abs/2016APExp...9d5502W

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@article{f2dc4bfdab3949158420d925a02728ff,

title = "Heteroepitaxy growth of GaAsBi on Ge(100) substrate by gas source molecular beam epitaxy",

abstract = "We have investigated the growth of GaAsBi single-crystal film on Ge substrate by gas source molecular beam epitaxy. A high-quality GaAsBi epilayer has been obtained. It has been found that the surfactant effect of Bi suppresses the interdiffusion of Ge at the GaAsBi/Ge interface and reduces the misfit dislocation density. The Bi atoms occupy the As sites, as indicated by the appearance of GaBi-like TO(Γ) and LO(Γ) phonon modes in Raman spectra. In addition, the redshift of the GaAs-like LO(Γ) phonon frequency has been observed in the Raman spectra, owing to the Bi-induced biaxial strain and the alloying effect as well.",

author = "Peng Wang and Wenwu Pan and Xiaoyan Wu and Chunfang Cao and Shumin Wang and Qian Gong",

year = "2016",

month = apr,

day = "1",

doi = "10.7567/APEX.9.045502",

language = "English",

volume = "9",

pages = "45502",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "IOP Publishing",

number = "4",

}

TY - JOUR

T1 - Heteroepitaxy growth of GaAsBi on Ge(100) substrate by gas source molecular beam epitaxy

AU - Wang, Peng

AU - Pan, Wenwu

AU - Wu, Xiaoyan

AU - Cao, Chunfang

AU - Wang, Shumin

AU - Gong, Qian

PY - 2016/4/1

Y1 - 2016/4/1

N2 - We have investigated the growth of GaAsBi single-crystal film on Ge substrate by gas source molecular beam epitaxy. A high-quality GaAsBi epilayer has been obtained. It has been found that the surfactant effect of Bi suppresses the interdiffusion of Ge at the GaAsBi/Ge interface and reduces the misfit dislocation density. The Bi atoms occupy the As sites, as indicated by the appearance of GaBi-like TO(Γ) and LO(Γ) phonon modes in Raman spectra. In addition, the redshift of the GaAs-like LO(Γ) phonon frequency has been observed in the Raman spectra, owing to the Bi-induced biaxial strain and the alloying effect as well.

AB - We have investigated the growth of GaAsBi single-crystal film on Ge substrate by gas source molecular beam epitaxy. A high-quality GaAsBi epilayer has been obtained. It has been found that the surfactant effect of Bi suppresses the interdiffusion of Ge at the GaAsBi/Ge interface and reduces the misfit dislocation density. The Bi atoms occupy the As sites, as indicated by the appearance of GaBi-like TO(Γ) and LO(Γ) phonon modes in Raman spectra. In addition, the redshift of the GaAs-like LO(Γ) phonon frequency has been observed in the Raman spectra, owing to the Bi-induced biaxial strain and the alloying effect as well.

U2 - 10.7567/APEX.9.045502

DO - 10.7567/APEX.9.045502

M3 - Article

VL - 9

SP - 45502

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 4

M1 - 45502

ER -

Heteroepitaxy growth of GaAsBi on Ge(100) substrate by gas source molecular beam epitaxy

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