Abstract
We have investigated the growth of GaAsBi single-crystal film on Ge
substrate by gas source molecular beam epitaxy. A high-quality GaAsBi
epilayer has been obtained. It has been found that the surfactant effect
of Bi suppresses the interdiffusion of Ge at the GaAsBi/Ge interface and
reduces the misfit dislocation density. The Bi atoms occupy the As
sites, as indicated by the appearance of GaBi-like TO(Γ) and
LO(Γ) phonon modes in Raman spectra. In addition, the redshift of
the GaAs-like LO(Γ) phonon frequency has been observed in the
Raman spectra, owing to the Bi-induced biaxial strain and the alloying
effect as well.
Original language | English |
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Pages (from-to) | 45502 |
Journal | Applied Physics Express |
Volume | 9 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1 Apr 2016 |
Externally published | Yes |