TY - JOUR
T1 - Heavy and light hole transport in nominally undoped GaSb substrates
AU - Kala, H.
AU - Umana Membreno, Gilberto A.
AU - Jolley, Greg
AU - Dehdashtiakhavan, Nima
AU - Patrashin, M.A.
AU - Akahane, K.
AU - Antoszewski, Jarek
AU - Faraone, Lorenzo
PY - 2015/1/21
Y1 - 2015/1/21
N2 - © 2015 AIP Publishing LLC. In this work, we report results of a study of electronic transport in nominally undoped p-type GaSb wafers typically employed as substrate material for the epitaxial growth of InAs/GaInSb type-II superlattices. Magnetic field dependent Hall-effect measurements and high-resolution mobility spectrum analysis clearly indicate p-type conductivity due to carriers in both the heavy and light hole bands. The extracted hole concentrations indicate a thermal activation energy of 17.8 meV for the dominant native acceptor-like defects. A temperature-independent effective mass ratio of 9.0 ± 0.8 was determined from the ratio of measured heavy and light hole concentrations. Over the 56 K-300 K temperature range, the light hole mobility was found to be 4.7 ± 0.7 times higher than the heavy hole mobility. The measured room temperature mobilities for the light and heavy holes were 2550 cm2/Vs and 520 cm2/Vs, respectively.
AB - © 2015 AIP Publishing LLC. In this work, we report results of a study of electronic transport in nominally undoped p-type GaSb wafers typically employed as substrate material for the epitaxial growth of InAs/GaInSb type-II superlattices. Magnetic field dependent Hall-effect measurements and high-resolution mobility spectrum analysis clearly indicate p-type conductivity due to carriers in both the heavy and light hole bands. The extracted hole concentrations indicate a thermal activation energy of 17.8 meV for the dominant native acceptor-like defects. A temperature-independent effective mass ratio of 9.0 ± 0.8 was determined from the ratio of measured heavy and light hole concentrations. Over the 56 K-300 K temperature range, the light hole mobility was found to be 4.7 ± 0.7 times higher than the heavy hole mobility. The measured room temperature mobilities for the light and heavy holes were 2550 cm2/Vs and 520 cm2/Vs, respectively.
UR - https://www.scopus.com/pages/publications/84923811547
U2 - 10.1063/1.4906489
DO - 10.1063/1.4906489
M3 - Article
SN - 0003-6951
VL - 106
SP - 1
EP - 5
JO - Applied Physics Letters
JF - Applied Physics Letters
M1 - 032103
ER -
