Heavy and light hole transport in nominally undoped GaSb substrates

    Research output: Contribution to journalArticle

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    Abstract

    © 2015 AIP Publishing LLC. In this work, we report results of a study of electronic transport in nominally undoped p-type GaSb wafers typically employed as substrate material for the epitaxial growth of InAs/GaInSb type-II superlattices. Magnetic field dependent Hall-effect measurements and high-resolution mobility spectrum analysis clearly indicate p-type conductivity due to carriers in both the heavy and light hole bands. The extracted hole concentrations indicate a thermal activation energy of 17.8 meV for the dominant native acceptor-like defects. A temperature-independent effective mass ratio of 9.0 ± 0.8 was determined from the ratio of measured heavy and light hole concentrations. Over the 56 K-300 K temperature range, the light hole mobility was found to be 4.7 ± 0.7 times higher than the heavy hole mobility. The measured room temperature mobilities for the light and heavy holes were 2550 cm2/Vs and 520 cm2/Vs, respectively.
    Original languageEnglish
    Article number032103
    Pages (from-to)1-5
    Number of pages5
    JournalApplied Physics Letters
    Volume106
    DOIs
    Publication statusPublished - 21 Jan 2015

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    hole mobility
    mass ratios
    spectrum analysis
    Hall effect
    superlattices
    wafers
    activation energy
    conductivity
    temperature
    high resolution
    defects
    room temperature
    electronics
    magnetic fields

    Cite this

    @article{725600c5fc034377a6585808a44dcdf7,
    title = "Heavy and light hole transport in nominally undoped GaSb substrates",
    abstract = "{\circledC} 2015 AIP Publishing LLC. In this work, we report results of a study of electronic transport in nominally undoped p-type GaSb wafers typically employed as substrate material for the epitaxial growth of InAs/GaInSb type-II superlattices. Magnetic field dependent Hall-effect measurements and high-resolution mobility spectrum analysis clearly indicate p-type conductivity due to carriers in both the heavy and light hole bands. The extracted hole concentrations indicate a thermal activation energy of 17.8 meV for the dominant native acceptor-like defects. A temperature-independent effective mass ratio of 9.0 ± 0.8 was determined from the ratio of measured heavy and light hole concentrations. Over the 56 K-300 K temperature range, the light hole mobility was found to be 4.7 ± 0.7 times higher than the heavy hole mobility. The measured room temperature mobilities for the light and heavy holes were 2550 cm2/Vs and 520 cm2/Vs, respectively.",
    author = "H. Kala and {Umana Membreno}, {Gilberto A.} and Greg Jolley and Nima Dehdashtiakhavan and M.A. Patrashin and K. Akahane and Jarek Antoszewski and Lorenzo Faraone",
    year = "2015",
    month = "1",
    day = "21",
    doi = "10.1063/1.4906489",
    language = "English",
    volume = "106",
    pages = "1--5",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "ACOUSTICAL SOC AMER AMER INST PHYSICS",

    }

    Heavy and light hole transport in nominally undoped GaSb substrates. / Kala, H.; Umana Membreno, Gilberto A.; Jolley, Greg; Dehdashtiakhavan, Nima; Patrashin, M.A.; Akahane, K.; Antoszewski, Jarek; Faraone, Lorenzo.

    In: Applied Physics Letters, Vol. 106, 032103, 21.01.2015, p. 1-5.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - Heavy and light hole transport in nominally undoped GaSb substrates

    AU - Kala, H.

    AU - Umana Membreno, Gilberto A.

    AU - Jolley, Greg

    AU - Dehdashtiakhavan, Nima

    AU - Patrashin, M.A.

    AU - Akahane, K.

    AU - Antoszewski, Jarek

    AU - Faraone, Lorenzo

    PY - 2015/1/21

    Y1 - 2015/1/21

    N2 - © 2015 AIP Publishing LLC. In this work, we report results of a study of electronic transport in nominally undoped p-type GaSb wafers typically employed as substrate material for the epitaxial growth of InAs/GaInSb type-II superlattices. Magnetic field dependent Hall-effect measurements and high-resolution mobility spectrum analysis clearly indicate p-type conductivity due to carriers in both the heavy and light hole bands. The extracted hole concentrations indicate a thermal activation energy of 17.8 meV for the dominant native acceptor-like defects. A temperature-independent effective mass ratio of 9.0 ± 0.8 was determined from the ratio of measured heavy and light hole concentrations. Over the 56 K-300 K temperature range, the light hole mobility was found to be 4.7 ± 0.7 times higher than the heavy hole mobility. The measured room temperature mobilities for the light and heavy holes were 2550 cm2/Vs and 520 cm2/Vs, respectively.

    AB - © 2015 AIP Publishing LLC. In this work, we report results of a study of electronic transport in nominally undoped p-type GaSb wafers typically employed as substrate material for the epitaxial growth of InAs/GaInSb type-II superlattices. Magnetic field dependent Hall-effect measurements and high-resolution mobility spectrum analysis clearly indicate p-type conductivity due to carriers in both the heavy and light hole bands. The extracted hole concentrations indicate a thermal activation energy of 17.8 meV for the dominant native acceptor-like defects. A temperature-independent effective mass ratio of 9.0 ± 0.8 was determined from the ratio of measured heavy and light hole concentrations. Over the 56 K-300 K temperature range, the light hole mobility was found to be 4.7 ± 0.7 times higher than the heavy hole mobility. The measured room temperature mobilities for the light and heavy holes were 2550 cm2/Vs and 520 cm2/Vs, respectively.

    U2 - 10.1063/1.4906489

    DO - 10.1063/1.4906489

    M3 - Article

    VL - 106

    SP - 1

    EP - 5

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    M1 - 032103

    ER -