Heavy and light hole transport in nominally undoped GaSb substrates

H. Kala; Gilberto A. Umana Membreno; Greg Jolley; Nima Dehdashtiakhavan; M.A. Patrashin; K. Akahane; Jarek Antoszewski; Lorenzo Faraone

doi:10.1063/1.4906489

Heavy and light hole transport in nominally undoped GaSb substrates

H. Kala, Gilberto A. Umana Membreno, Greg Jolley, Nima Dehdashtiakhavan, M.A. Patrashin, K. Akahane, Jarek Antoszewski, Lorenzo Faraone

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Abstract

© 2015 AIP Publishing LLC. In this work, we report results of a study of electronic transport in nominally undoped p-type GaSb wafers typically employed as substrate material for the epitaxial growth of InAs/GaInSb type-II superlattices. Magnetic field dependent Hall-effect measurements and high-resolution mobility spectrum analysis clearly indicate p-type conductivity due to carriers in both the heavy and light hole bands. The extracted hole concentrations indicate a thermal activation energy of 17.8 meV for the dominant native acceptor-like defects. A temperature-independent effective mass ratio of 9.0 ± 0.8 was determined from the ratio of measured heavy and light hole concentrations. Over the 56 K-300 K temperature range, the light hole mobility was found to be 4.7 ± 0.7 times higher than the heavy hole mobility. The measured room temperature mobilities for the light and heavy holes were 2550 cm2/Vs and 520 cm2/Vs, respectively.

Original language	English
Article number	032103
Pages (from-to)	1-5
Number of pages	5
Journal	Applied Physics Letters
Volume	106
DOIs	https://doi.org/10.1063/1.4906489
Publication status	Published - 21 Jan 2015

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title = "Heavy and light hole transport in nominally undoped GaSb substrates",

abstract = "{\textcopyright} 2015 AIP Publishing LLC. In this work, we report results of a study of electronic transport in nominally undoped p-type GaSb wafers typically employed as substrate material for the epitaxial growth of InAs/GaInSb type-II superlattices. Magnetic field dependent Hall-effect measurements and high-resolution mobility spectrum analysis clearly indicate p-type conductivity due to carriers in both the heavy and light hole bands. The extracted hole concentrations indicate a thermal activation energy of 17.8 meV for the dominant native acceptor-like defects. A temperature-independent effective mass ratio of 9.0 ± 0.8 was determined from the ratio of measured heavy and light hole concentrations. Over the 56 K-300 K temperature range, the light hole mobility was found to be 4.7 ± 0.7 times higher than the heavy hole mobility. The measured room temperature mobilities for the light and heavy holes were 2550 cm2/Vs and 520 cm2/Vs, respectively.",

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T1 - Heavy and light hole transport in nominally undoped GaSb substrates

AU - Kala, H.

AU - Umana Membreno, Gilberto A.

AU - Jolley, Greg

AU - Dehdashtiakhavan, Nima

AU - Patrashin, M.A.

AU - Akahane, K.

AU - Antoszewski, Jarek

AU - Faraone, Lorenzo

PY - 2015/1/21

Y1 - 2015/1/21

N2 - © 2015 AIP Publishing LLC. In this work, we report results of a study of electronic transport in nominally undoped p-type GaSb wafers typically employed as substrate material for the epitaxial growth of InAs/GaInSb type-II superlattices. Magnetic field dependent Hall-effect measurements and high-resolution mobility spectrum analysis clearly indicate p-type conductivity due to carriers in both the heavy and light hole bands. The extracted hole concentrations indicate a thermal activation energy of 17.8 meV for the dominant native acceptor-like defects. A temperature-independent effective mass ratio of 9.0 ± 0.8 was determined from the ratio of measured heavy and light hole concentrations. Over the 56 K-300 K temperature range, the light hole mobility was found to be 4.7 ± 0.7 times higher than the heavy hole mobility. The measured room temperature mobilities for the light and heavy holes were 2550 cm2/Vs and 520 cm2/Vs, respectively.

AB - © 2015 AIP Publishing LLC. In this work, we report results of a study of electronic transport in nominally undoped p-type GaSb wafers typically employed as substrate material for the epitaxial growth of InAs/GaInSb type-II superlattices. Magnetic field dependent Hall-effect measurements and high-resolution mobility spectrum analysis clearly indicate p-type conductivity due to carriers in both the heavy and light hole bands. The extracted hole concentrations indicate a thermal activation energy of 17.8 meV for the dominant native acceptor-like defects. A temperature-independent effective mass ratio of 9.0 ± 0.8 was determined from the ratio of measured heavy and light hole concentrations. Over the 56 K-300 K temperature range, the light hole mobility was found to be 4.7 ± 0.7 times higher than the heavy hole mobility. The measured room temperature mobilities for the light and heavy holes were 2550 cm2/Vs and 520 cm2/Vs, respectively.

U2 - 10.1063/1.4906489

DO - 10.1063/1.4906489

M3 - Article

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VL - 106

SP - 1

EP - 5

JO - Applied Physics Letters

JF - Applied Physics Letters

M1 - 032103

ER -

Heavy and light hole transport in nominally undoped GaSb substrates

Abstract

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