Hall-effect characterization of electron transport at SiO2/4H-SiC MOS interfaces

Gilberto A. Umana Membreno, S. Dhar, Amit Choudhary, S.H. Ryu, Jarek Antoszewski, Lorenzo Faraone

    Research output: Contribution to journal › Article › peer-review

    6 Citations (Scopus)
    245 Downloads (Pure)

    Fingerprint

    Dive into the research topics of 'Hall-effect characterization of electron transport at SiO2/4H-SiC MOS interfaces'. Together they form a unique fingerprint.

    Engineering

    Material Science