Growth and XPS Characterisation of Anodic Telluride Films on Hg1-xCdxTe

M. Jain, Brett Nener, N. Warrington, M.V. Baker, J.L. Robins, Lorenzo Faraone

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

An anodic tellurization process to grow native telluride films on Hg1-xCdxTe is described. This process requires two steps: first the growth of an anodic sulfide/oxide film and second the conversion of this film into an anodic telluride film. XPS studies suggest that the total conversion of the anodic sulfide/oxide film into an anodic telluride film is possible. The concentration of tellurium in the anodically grown telluride films can be controlled by controlling the concentration of sulfur and oxygen in the starting film.
Original languageEnglish
Pages (from-to)2480-2485
JournalJournal of the Electrochemical Society
Volume142
Issue number7
DOIs
Publication statusPublished - 1995

Fingerprint

Dive into the research topics of 'Growth and XPS Characterisation of Anodic Telluride Films on Hg1-xCdxTe'. Together they form a unique fingerprint.

Cite this