We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN(11-22) orientation. An intermetallic phase of Ga3Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of (0002). Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current (similar to 10(-3) A/cm(2)). These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices. (c) 2005 American Institute of Physics.
Kocan, M., Mikulics, M., Rizzi, A., Javorka, P., Sofer, Z., Stejskal, J., ... Luth, H. (2005). Growth and properties of GaN and AlN layers on silver substrates. Applied Physics Letters, 87(21), 212109 (1-3). https://doi.org/10.1063/1.2135879