Growth and properties of GaN and AlN layers on silver substrates

Martin Kocan, M. Mikulics, A. Rizzi, P. Javorka, Z. Sofer, J. Stejskal, M. Marso, P. Kordo¿, H. Luth

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    20 Citations (Scopus)


    We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN(11-22) orientation. An intermetallic phase of Ga3Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of (0002). Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current (similar to 10(-3) A/cm(2)). These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices. (c) 2005 American Institute of Physics.
    Original languageEnglish
    Pages (from-to)212109 (1-3)
    JournalApplied Physics Letters
    Issue number21
    Publication statusPublished - 2005


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