Growth and material properties of InPBi thin films using gas source molecular beam epitaxy

Wenwu Pan, Peng Wang, Xiaoyan Wu, Kai Wang, Jian Cui, Li Yue, Liyao Zhang, Qian Gong, Shumin Wang

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13 Citations (Scopus)

Abstract

The effects of Bi, In flux and PH3 pressure on Bi incorporation, structural and transport properties of InPBi grown by gas source molecular beam epitaxy have been systematically studied. Incorporation of Bi behaves like a dopant and its content increases linearly with Bi flux and inversely with the InP growth rate (In flux), and is independent of the PH3 pressure studied. High PH3 pressure causes rough surface and introduction of Bi improves surface quality. Intrinsic InP grown at a low temperature reveals n-type due to the P-ln antisite defects and the electron density is proportional to the PH3 pressure and inversely proportional to the InP growth rate. Incorporation of Bi induces p-type dopant that compensates the background electron concentration but doesn't degrade the electron mobility for the Bi content up to 2.4%. These results suggest that there is still a large room left to optimize material quality and maximize Bi incorporation in InPBi using gas source molecular beam epitaxy. (C) 2015 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)777-783
Number of pages7
JournalJournal of Alloys and Compounds
Volume656
DOIs
Publication statusPublished - 25 Jan 2016
Externally publishedYes

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