GaSb-based II-VI semiconductors for application in next generation infrared detectors

Wen Lei; Yongling Ren; Imtiaz Madni; Renjie Gu; Gilberto A. Umana-Membreno; Jarek Antoszewski; Lorenzo Faraone

doi:10.1109/RAPID.2018.8508913

GaSb-based II-VI semiconductors for application in next generation infrared detectors

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Abstract

In this work, we will review our recent effort on developing GaSb-based II-VI semiconductors (mainly HgCdTe/CdTe and HgCdSe epitaxial materials grown on GaSb substrates) for making next generation infrared detectors with features of lower cost and larger array format size.

Original language	English
Title of host publication	RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	19-22
Number of pages	4
ISBN (Electronic)	9781538653494
DOIs	https://doi.org/10.1109/RAPID.2018.8508913
Publication status	Published - 24 Oct 2018
Event	1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018 - Mirimar Beach, United States Duration: 22 Aug 2018 → 24 Aug 2018

Conference

Conference	1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018
Country/Territory	United States
City	Mirimar Beach
Period	22/08/18 → 24/08/18

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10.1109/RAPID.2018.8508913

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Lei, W., Ren, Y., Madni, I., Gu, R., Umana-Membreno, G. A., Antoszewski, J., & Faraone, L. (2018). GaSb-based II-VI semiconductors for application in next generation infrared detectors. In RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference (pp. 19-22). Article 8508913 IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/RAPID.2018.8508913

@inproceedings{cab7824b5d8d4184aa7d9e52f3543bf6,

title = "GaSb-based II-VI semiconductors for application in next generation infrared detectors",

abstract = "In this work, we will review our recent effort on developing GaSb-based II-VI semiconductors (mainly HgCdTe/CdTe and HgCdSe epitaxial materials grown on GaSb substrates) for making next generation infrared detectors with features of lower cost and larger array format size.",

keywords = "GaSb, II-VI semiconductor, infrared detectors",

author = "Wen Lei and Yongling Ren and Imtiaz Madni and Renjie Gu and Umana-Membreno, \{Gilberto A.\} and Jarek Antoszewski and Lorenzo Faraone",

year = "2018",

month = oct,

day = "24",

doi = "10.1109/RAPID.2018.8508913",

language = "English",

pages = "19--22",

booktitle = "RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States",

note = "1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018 ; Conference date: 22-08-2018 Through 24-08-2018",

}

Lei, W, Ren, Y, Madni, I, Gu, R , Umana-Membreno, GA , Antoszewski, J & Faraone, L 2018, GaSb-based II-VI semiconductors for application in next generation infrared detectors. in RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference., 8508913, IEEE, Institute of Electrical and Electronics Engineers, pp. 19-22, 1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018, Mirimar Beach, United States, 22/08/18. https://doi.org/10.1109/RAPID.2018.8508913

GaSb-based II-VI semiconductors for application in next generation infrared detectors. / Lei, Wen; Ren, Yongling; Madni, Imtiaz et al.
RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference. IEEE, Institute of Electrical and Electronics Engineers, 2018. p. 19-22 8508913.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - GaSb-based II-VI semiconductors for application in next generation infrared detectors

AU - Lei, Wen

AU - Ren, Yongling

AU - Madni, Imtiaz

AU - Gu, Renjie

AU - Umana-Membreno, Gilberto A.

AU - Antoszewski, Jarek

AU - Faraone, Lorenzo

PY - 2018/10/24

Y1 - 2018/10/24

N2 - In this work, we will review our recent effort on developing GaSb-based II-VI semiconductors (mainly HgCdTe/CdTe and HgCdSe epitaxial materials grown on GaSb substrates) for making next generation infrared detectors with features of lower cost and larger array format size.

AB - In this work, we will review our recent effort on developing GaSb-based II-VI semiconductors (mainly HgCdTe/CdTe and HgCdSe epitaxial materials grown on GaSb substrates) for making next generation infrared detectors with features of lower cost and larger array format size.

KW - GaSb

KW - II-VI semiconductor

KW - infrared detectors

UR - https://www.scopus.com/pages/publications/85057079245

U2 - 10.1109/RAPID.2018.8508913

DO - 10.1109/RAPID.2018.8508913

M3 - Conference paper

AN - SCOPUS:85057079245

SP - 19

EP - 22

BT - RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference

PB - IEEE, Institute of Electrical and Electronics Engineers

T2 - 1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018

Y2 - 22 August 2018 through 24 August 2018

ER -

GaSb-based II-VI semiconductors for application in next generation infrared detectors

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