GaSb-based II-VI semiconductors for application in next generation infrared detectors

Research output: Chapter in Book/Conference paperConference paper

Abstract

In this work, we will review our recent effort on developing GaSb-based II-VI semiconductors (mainly HgCdTe/CdTe and HgCdSe epitaxial materials grown on GaSb substrates) for making next generation infrared detectors with features of lower cost and larger array format size.

Original languageEnglish
Title of host publicationRAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages19-22
Number of pages4
ISBN (Electronic)9781538653494
DOIs
Publication statusPublished - 24 Oct 2018
Event1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018 - Mirimar Beach, United States
Duration: 22 Aug 201824 Aug 2018

Conference

Conference1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018
CountryUnited States
CityMirimar Beach
Period22/08/1824/08/18

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