GaSb-based II-VI semiconductors for application in next generation infrared detectors

    Research output: Chapter in Book/Conference paperConference paper

    Abstract

    In this work, we will review our recent effort on developing GaSb-based II-VI semiconductors (mainly HgCdTe/CdTe and HgCdSe epitaxial materials grown on GaSb substrates) for making next generation infrared detectors with features of lower cost and larger array format size.

    Original languageEnglish
    Title of host publicationRAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference
    PublisherIEEE, Institute of Electrical and Electronics Engineers
    Pages19-22
    Number of pages4
    ISBN (Electronic)9781538653494
    DOIs
    Publication statusPublished - 24 Oct 2018
    Event1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018 - Mirimar Beach, United States
    Duration: 22 Aug 201824 Aug 2018

    Conference

    Conference1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018
    CountryUnited States
    CityMirimar Beach
    Period22/08/1824/08/18

    Fingerprint

    Infrared detectors
    infrared detectors
    format
    Substrates
    costs
    Costs
    II-VI semiconductors

    Cite this

    Lei, W., Ren, Y., Madni, I., Gu, R., Umana-Membreno, G. A., Antoszewski, J., & Faraone, L. (2018). GaSb-based II-VI semiconductors for application in next generation infrared detectors. In RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference (pp. 19-22). [8508913] IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/RAPID.2018.8508913
    Lei, Wen ; Ren, Yongling ; Madni, Imtiaz ; Gu, Renjie ; Umana-Membreno, Gilberto A. ; Antoszewski, Jarek ; Faraone, Lorenzo. / GaSb-based II-VI semiconductors for application in next generation infrared detectors. RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference. IEEE, Institute of Electrical and Electronics Engineers, 2018. pp. 19-22
    @inproceedings{cab7824b5d8d4184aa7d9e52f3543bf6,
    title = "GaSb-based II-VI semiconductors for application in next generation infrared detectors",
    abstract = "In this work, we will review our recent effort on developing GaSb-based II-VI semiconductors (mainly HgCdTe/CdTe and HgCdSe epitaxial materials grown on GaSb substrates) for making next generation infrared detectors with features of lower cost and larger array format size.",
    keywords = "GaSb, II-VI semiconductor, infrared detectors",
    author = "Wen Lei and Yongling Ren and Imtiaz Madni and Renjie Gu and Umana-Membreno, {Gilberto A.} and Jarek Antoszewski and Lorenzo Faraone",
    year = "2018",
    month = "10",
    day = "24",
    doi = "10.1109/RAPID.2018.8508913",
    language = "English",
    pages = "19--22",
    booktitle = "RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference",
    publisher = "IEEE, Institute of Electrical and Electronics Engineers",
    address = "United States",

    }

    Lei, W, Ren, Y, Madni, I, Gu, R, Umana-Membreno, GA, Antoszewski, J & Faraone, L 2018, GaSb-based II-VI semiconductors for application in next generation infrared detectors. in RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference., 8508913, IEEE, Institute of Electrical and Electronics Engineers, pp. 19-22, 1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018, Mirimar Beach, United States, 22/08/18. https://doi.org/10.1109/RAPID.2018.8508913

    GaSb-based II-VI semiconductors for application in next generation infrared detectors. / Lei, Wen; Ren, Yongling; Madni, Imtiaz; Gu, Renjie; Umana-Membreno, Gilberto A.; Antoszewski, Jarek; Faraone, Lorenzo.

    RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference. IEEE, Institute of Electrical and Electronics Engineers, 2018. p. 19-22 8508913.

    Research output: Chapter in Book/Conference paperConference paper

    TY - GEN

    T1 - GaSb-based II-VI semiconductors for application in next generation infrared detectors

    AU - Lei, Wen

    AU - Ren, Yongling

    AU - Madni, Imtiaz

    AU - Gu, Renjie

    AU - Umana-Membreno, Gilberto A.

    AU - Antoszewski, Jarek

    AU - Faraone, Lorenzo

    PY - 2018/10/24

    Y1 - 2018/10/24

    N2 - In this work, we will review our recent effort on developing GaSb-based II-VI semiconductors (mainly HgCdTe/CdTe and HgCdSe epitaxial materials grown on GaSb substrates) for making next generation infrared detectors with features of lower cost and larger array format size.

    AB - In this work, we will review our recent effort on developing GaSb-based II-VI semiconductors (mainly HgCdTe/CdTe and HgCdSe epitaxial materials grown on GaSb substrates) for making next generation infrared detectors with features of lower cost and larger array format size.

    KW - GaSb

    KW - II-VI semiconductor

    KW - infrared detectors

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    U2 - 10.1109/RAPID.2018.8508913

    DO - 10.1109/RAPID.2018.8508913

    M3 - Conference paper

    SP - 19

    EP - 22

    BT - RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference

    PB - IEEE, Institute of Electrical and Electronics Engineers

    ER -

    Lei W, Ren Y, Madni I, Gu R, Umana-Membreno GA, Antoszewski J et al. GaSb-based II-VI semiconductors for application in next generation infrared detectors. In RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference. IEEE, Institute of Electrical and Electronics Engineers. 2018. p. 19-22. 8508913 https://doi.org/10.1109/RAPID.2018.8508913