Gallium nitride based transistors

H. Xing, S. Keller, Y.F. Wu, L. Mccarty, I.P. Smorchkova, D. Buttari, R. Coffie, D.S. Green, Giacinta Parish, S. Heikman, L. Shen, N. Zhang, J.J. Xu, B.P. Keller, S.P. Denbaars, U.K. Mishra

    Research output: Contribution to journalArticlepeer-review

    103 Citations (Scopus)

    Abstract

    An overview is presented of progress in GaN electronic devices along with recent results from work at UCSB. From 1995 to 2001, the power performance of AlGaN/GaN high electron mobility transistors (HEMT) improved from 1.1 to 11 W mm(-1), respectively. The disadvantage of the low thermal conductivity of the sapphire substrate was mitigated by flip-chip bonding onto AIN substrates, yielding large periphery devices with an output power of 7.6 W. A variety of HEMT amplifier circuits have been demonstrated. The first AlGaN/GaN heterojunction bipolar transistor (HBT) was demonstrated in 1998, with a current gain of about 3. By developing the technique of emitter regrowth, a current gain of 10 was achieved in both GaN BJTs and AlGaN/GaN HBTs. A common emitter current gain cutoff frequency of 2 GHz was measured. Critical issues involved in the growth of high quality AlGaN/(AlN)/GaN heterostructures and GaN:Mg by metal-organic chemical vapour deposition (MOCVD) and molecular beam epitaxy (MBE) and the device fabrication are discussed.
    Original languageEnglish
    Pages (from-to)7139-7157
    JournalJournal of Physics: Condensed Matter
    Volume13
    DOIs
    Publication statusPublished - 2001

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