Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB

S. Keller, Y.F. Wu, Giacinta Parish, N. Zhang, J.J. Xu, B.P. Keller, S.P. Denbaars, U.K. Mishra

    Research output: Contribution to journalArticlepeer-review

    196 Citations (Scopus)

    Abstract

    The development of GaN based devices for microwave power electronics at the University of California, Santa Barbara (UCSB), is reviewed, From 1995 to 2000, the power performance of AlGaN/GaN on-sapphire heterojunction field effect transistors improved from 1.1 W/mm to 6.6 W/mm, respectively. Compensating the disadvantages of the low thermal conductivity of the sapphire substrate through heat management via flip chip bonding onto AIN substrates, large periphery devices with an output power of 7.6 W were demonstrated. UCSB also fabricated the first GaN based amplifier integrated circuits, Critical issues involved in the growth of high quality AlGaN/GaN heterostructures by metal-organic chemical vapor deposition and the device fabrication are discussed.
    Original languageEnglish
    Pages (from-to)552-559
    JournalIEEE Transactions on Electron Devices
    Volume48
    Issue number3
    DOIs
    Publication statusPublished - 2001

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