Formation of InSb quantum dots in a GaSb matrix

A. F. Tsatsul'nikov; S. V. Ivanov; P. S. Kop'ev; A. K. Kryganovskii; N. N. Ledentsov; M. V. Maximov; B. Ya Mel'tser; P. V. Nekludov; A. A. Suvorova; A. N. Titkov; B. V. Volovik; M. Grundmann; D. Bimberg; Zh I. Alferov

doi:10.1007/s11664-998-0170-8

Formation of InSb quantum dots in a GaSb matrix

A. F. Tsatsul'nikov, S. V. Ivanov, P. S. Kop'ev, A. K. Kryganovskii, N. N. Ledentsov, M. V. Maximov, B. Ya Mel'tser, P. V. Nekludov, A. A. Suvorova, A. N. Titkov, B. V. Volovik, M. Grundmann, D. Bimberg, Zh I. Alferov

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12 Citations (Scopus)

Abstract

InSb nanoislands in a GaSb matrix have been fabricated and their structural and luminescence properties have been studied. The deposition of ∼1.7 monolayers of InSb in a GaSb(100) matrix has been found by transmission electron microscopy to result in a 2D-3D growth mode transition and a formation of small InSb quantum dots (QDs) with lateral sizes of-10 nm. Bright luminescence due to these QDs is observed. Stacking of the QDs results in a formation of vertical-coupled QD planes and leads to a long wavelength shift of photoluminescence line associated with the QDs. Increase in the InSb layer thickness above ∼2 monolayers results in formation of 3D dislocated InSb islands with a lateral size above 60 nm and the dramatic drop of photoluminescence intensity.

Original language	English
Pages (from-to)	414-417
Number of pages	4
Journal	Journal of Electronic Materials
Volume	27
Issue number	5
DOIs	https://doi.org/10.1007/s11664-998-0170-8
Publication status	Published - May 1998
Externally published	Yes

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Tsatsul'nikov, A. F., Ivanov, S. V., Kop'ev, P. S., Kryganovskii, A. K., Ledentsov, N. N., Maximov, M. V., Mel'tser, B. Y., Nekludov, P. V., Suvorova, A. A., Titkov, A. N., Volovik, B. V., Grundmann, M., Bimberg, D., & Alferov, Z. I. (1998). Formation of InSb quantum dots in a GaSb matrix. Journal of Electronic Materials, 27(5), 414-417. https://doi.org/10.1007/s11664-998-0170-8

@article{e3dc40cecc6a4790a64d4aac47cbafdb,

title = "Formation of InSb quantum dots in a GaSb matrix",

abstract = "InSb nanoislands in a GaSb matrix have been fabricated and their structural and luminescence properties have been studied. The deposition of ∼1.7 monolayers of InSb in a GaSb(100) matrix has been found by transmission electron microscopy to result in a 2D-3D growth mode transition and a formation of small InSb quantum dots (QDs) with lateral sizes of-10 nm. Bright luminescence due to these QDs is observed. Stacking of the QDs results in a formation of vertical-coupled QD planes and leads to a long wavelength shift of photoluminescence line associated with the QDs. Increase in the InSb layer thickness above ∼2 monolayers results in formation of 3D dislocated InSb islands with a lateral size above 60 nm and the dramatic drop of photoluminescence intensity.",

keywords = "InSb, Nano-islands, Photoluminescence, Quantum dots",

author = "Tsatsul'nikov, {A. F.} and Ivanov, {S. V.} and Kop'ev, {P. S.} and Kryganovskii, {A. K.} and Ledentsov, {N. N.} and Maximov, {M. V.} and Mel'tser, {B. Ya} and Nekludov, {P. V.} and Suvorova, {A. A.} and Titkov, {A. N.} and Volovik, {B. V.} and M. Grundmann and D. Bimberg and Alferov, {Zh I.}",

year = "1998",

month = may,

doi = "10.1007/s11664-998-0170-8",

language = "English",

volume = "27",

pages = "414--417",

journal = "Journal of Electronic Materials",

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T1 - Formation of InSb quantum dots in a GaSb matrix

AU - Tsatsul'nikov, A. F.

AU - Ivanov, S. V.

AU - Kop'ev, P. S.

AU - Kryganovskii, A. K.

AU - Ledentsov, N. N.

AU - Maximov, M. V.

AU - Mel'tser, B. Ya

AU - Nekludov, P. V.

AU - Suvorova, A. A.

AU - Titkov, A. N.

AU - Volovik, B. V.

AU - Grundmann, M.

AU - Bimberg, D.

AU - Alferov, Zh I.

PY - 1998/5

Y1 - 1998/5

N2 - InSb nanoislands in a GaSb matrix have been fabricated and their structural and luminescence properties have been studied. The deposition of ∼1.7 monolayers of InSb in a GaSb(100) matrix has been found by transmission electron microscopy to result in a 2D-3D growth mode transition and a formation of small InSb quantum dots (QDs) with lateral sizes of-10 nm. Bright luminescence due to these QDs is observed. Stacking of the QDs results in a formation of vertical-coupled QD planes and leads to a long wavelength shift of photoluminescence line associated with the QDs. Increase in the InSb layer thickness above ∼2 monolayers results in formation of 3D dislocated InSb islands with a lateral size above 60 nm and the dramatic drop of photoluminescence intensity.

AB - InSb nanoislands in a GaSb matrix have been fabricated and their structural and luminescence properties have been studied. The deposition of ∼1.7 monolayers of InSb in a GaSb(100) matrix has been found by transmission electron microscopy to result in a 2D-3D growth mode transition and a formation of small InSb quantum dots (QDs) with lateral sizes of-10 nm. Bright luminescence due to these QDs is observed. Stacking of the QDs results in a formation of vertical-coupled QD planes and leads to a long wavelength shift of photoluminescence line associated with the QDs. Increase in the InSb layer thickness above ∼2 monolayers results in formation of 3D dislocated InSb islands with a lateral size above 60 nm and the dramatic drop of photoluminescence intensity.

KW - InSb

KW - Nano-islands

KW - Photoluminescence

KW - Quantum dots

UR - http://www.scopus.com/inward/record.url?scp=0000958479&partnerID=8YFLogxK

U2 - 10.1007/s11664-998-0170-8

DO - 10.1007/s11664-998-0170-8

M3 - Article

AN - SCOPUS:0000958479

VL - 27

SP - 414

EP - 417

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 5

ER -

Formation of InSb quantum dots in a GaSb matrix

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