Formation of InSb quantum dots in a GaSb matrix

A. F. Tsatsul'nikov, S. V. Ivanov, P. S. Kop'ev, A. K. Kryganovskii, N. N. Ledentsov, M. V. Maximov, B. Ya Mel'tser, P. V. Nekludov, A. A. Suvorova, A. N. Titkov, B. V. Volovik, M. Grundmann, D. Bimberg, Zh I. Alferov

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12 Citations (Scopus)

Abstract

InSb nanoislands in a GaSb matrix have been fabricated and their structural and luminescence properties have been studied. The deposition of ∼1.7 monolayers of InSb in a GaSb(100) matrix has been found by transmission electron microscopy to result in a 2D-3D growth mode transition and a formation of small InSb quantum dots (QDs) with lateral sizes of-10 nm. Bright luminescence due to these QDs is observed. Stacking of the QDs results in a formation of vertical-coupled QD planes and leads to a long wavelength shift of photoluminescence line associated with the QDs. Increase in the InSb layer thickness above ∼2 monolayers results in formation of 3D dislocated InSb islands with a lateral size above 60 nm and the dramatic drop of photoluminescence intensity.

Original languageEnglish
Pages (from-to)414-417
Number of pages4
JournalJournal of Electronic Materials
Volume27
Issue number5
DOIs
Publication statusPublished - May 1998
Externally publishedYes

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