Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements

A. N. Nazarov, I. Ferain, N. Dehdashti Akhavan, P. Razavi, R. Yu, J. P. Colinge

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Abstract

A technique based on the combined measurements of random telegraph-signal noise amplitude and drain current vs. gate voltage characteristics is proposed to extract the channel mobility in inversion-mode and accumulation-mode nanowire transistors. This method does not require the preliminary knowledge of the gate oxide capacitance or that of the channel width. The method accounts for the presence of parasitic source and drain resistance effect. It has been used to extract the zero-field mobility and the field mobility reduction factor in inversion-mode and junctionless transistors operating in accumulation mode. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626038]

Original languageEnglish
Article number073502
Number of pages3
JournalApplied Physics Letters
Volume99
Issue number7
DOIs
Publication statusPublished - 15 Aug 2011
Externally publishedYes

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