TY - JOUR
T1 - Fabrication of graphitic layers in diamond using FIB implantation and high pressure high temperature annealing
AU - Rubanov, S.
AU - Suvorova, Alexandra
AU - Popov, V.P. P.
AU - Kalinin, A.A. A.
AU - Pal'yanov, Yu.N. .N.
PY - 2016/3/1
Y1 - 2016/3/1
N2 - We have used high pressure high temperature annealing (HPHT) for graphitisation of implanted layers in diamond created by 30 keV Ga+ focused ion beam. Electron microscopy has been used to investigate the implanted layers. It has been revealed that, unlike annealing at vacuum pressure, the graphitization during HPHT annealing occurred through epitaxial growth of graphite (002) planes parallel to (111) diamond planes. High quality of graphite was confirmed by high resolution electron microscopy and electron energy loss spectroscopy.
AB - We have used high pressure high temperature annealing (HPHT) for graphitisation of implanted layers in diamond created by 30 keV Ga+ focused ion beam. Electron microscopy has been used to investigate the implanted layers. It has been revealed that, unlike annealing at vacuum pressure, the graphitization during HPHT annealing occurred through epitaxial growth of graphite (002) planes parallel to (111) diamond planes. High quality of graphite was confirmed by high resolution electron microscopy and electron energy loss spectroscopy.
U2 - 10.1016/j.diamond.2015.11.017
DO - 10.1016/j.diamond.2015.11.017
M3 - Article
SN - 0925-9635
VL - 63
SP - 143
EP - 147
JO - Diamond & Related Materials
JF - Diamond & Related Materials
ER -