Experimental investigation of polarisation rotation in semiconductor optical amplifiers

Brendan Kennedy, S. Philippe, P. Landais, A.L. Bradley, H. Soto

    Research output: Contribution to journalArticle

    18 Citations (Scopus)

    Abstract

    An experimental study of polarisation rotation in a semiconductor optical amplifier is presented. Two techniques are used to investigate the gain and birefringence along the two eigenmodes of the component waveguide, with and without injection. The first investigation is based on the residual reflectivity of the facet mirrors. From the modulation depth of polarisation resolved spectra, the gain and the refractive indices of these modes are determined. The second investigation takes into account the variation of the eigenmode gain and refractive indices as a function of injected power over the range 83.3 to 413 μW. The results of these two experiments are compared, and it is determined that the refractive index and the single-pass gain along the horizontal axis of the waveguide are higher than those along the vertical axis. Both gain and refractive index differences increase as a function of injected power in the sample under test. Furthermore, it is concluded that polarisation rotation in this component is heavily influenced by the power dependence of the relative gain in the TE and TM modes and birefringence.
    Original languageEnglish
    Pages (from-to)114-118
    JournalIET Optoelectronics
    Volume151
    Issue number2
    DOIs
    Publication statusPublished - 2004

    Fingerprint

    Semiconductor optical amplifiers
    light amplifiers
    Refractive index
    Polarization
    polarization
    Birefringence
    refractivity
    Waveguide components
    birefringence
    waveguides
    Waveguides
    Modulation
    flat surfaces
    injection
    mirrors
    reflectance
    modulation
    Experiments

    Cite this

    Kennedy, Brendan ; Philippe, S. ; Landais, P. ; Bradley, A.L. ; Soto, H. / Experimental investigation of polarisation rotation in semiconductor optical amplifiers. In: IET Optoelectronics. 2004 ; Vol. 151, No. 2. pp. 114-118.
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    abstract = "An experimental study of polarisation rotation in a semiconductor optical amplifier is presented. Two techniques are used to investigate the gain and birefringence along the two eigenmodes of the component waveguide, with and without injection. The first investigation is based on the residual reflectivity of the facet mirrors. From the modulation depth of polarisation resolved spectra, the gain and the refractive indices of these modes are determined. The second investigation takes into account the variation of the eigenmode gain and refractive indices as a function of injected power over the range 83.3 to 413 μW. The results of these two experiments are compared, and it is determined that the refractive index and the single-pass gain along the horizontal axis of the waveguide are higher than those along the vertical axis. Both gain and refractive index differences increase as a function of injected power in the sample under test. Furthermore, it is concluded that polarisation rotation in this component is heavily influenced by the power dependence of the relative gain in the TE and TM modes and birefringence.",
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    Experimental investigation of polarisation rotation in semiconductor optical amplifiers. / Kennedy, Brendan; Philippe, S.; Landais, P.; Bradley, A.L.; Soto, H.

    In: IET Optoelectronics, Vol. 151, No. 2, 2004, p. 114-118.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - Experimental investigation of polarisation rotation in semiconductor optical amplifiers

    AU - Kennedy, Brendan

    AU - Philippe, S.

    AU - Landais, P.

    AU - Bradley, A.L.

    AU - Soto, H.

    PY - 2004

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    N2 - An experimental study of polarisation rotation in a semiconductor optical amplifier is presented. Two techniques are used to investigate the gain and birefringence along the two eigenmodes of the component waveguide, with and without injection. The first investigation is based on the residual reflectivity of the facet mirrors. From the modulation depth of polarisation resolved spectra, the gain and the refractive indices of these modes are determined. The second investigation takes into account the variation of the eigenmode gain and refractive indices as a function of injected power over the range 83.3 to 413 μW. The results of these two experiments are compared, and it is determined that the refractive index and the single-pass gain along the horizontal axis of the waveguide are higher than those along the vertical axis. Both gain and refractive index differences increase as a function of injected power in the sample under test. Furthermore, it is concluded that polarisation rotation in this component is heavily influenced by the power dependence of the relative gain in the TE and TM modes and birefringence.

    AB - An experimental study of polarisation rotation in a semiconductor optical amplifier is presented. Two techniques are used to investigate the gain and birefringence along the two eigenmodes of the component waveguide, with and without injection. The first investigation is based on the residual reflectivity of the facet mirrors. From the modulation depth of polarisation resolved spectra, the gain and the refractive indices of these modes are determined. The second investigation takes into account the variation of the eigenmode gain and refractive indices as a function of injected power over the range 83.3 to 413 μW. The results of these two experiments are compared, and it is determined that the refractive index and the single-pass gain along the horizontal axis of the waveguide are higher than those along the vertical axis. Both gain and refractive index differences increase as a function of injected power in the sample under test. Furthermore, it is concluded that polarisation rotation in this component is heavily influenced by the power dependence of the relative gain in the TE and TM modes and birefringence.

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