Experimental and numerical investigation of the electrical characteristics of vertical n-p junction diodes created by Si implantation into p-GaN

A. Baharin, Martin Kocan, Gilberto A. Umana Membreno, U. Mishra, Giacinta Parish, Brett Nener

Research output: Chapter in Book/Conference paperConference paper

3 Citations (Scopus)
Original languageEnglish
Title of host publicationProceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices
EditorsLorenzo Faraone, Michael Cortie, Andres Cuevas, John Dell, Chennupati Jagadish, Martin Kocan, Barry Luther-Davies, Mari
Place of PublicationUSA
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages12-15
VolumeCD-ROM
EditionSydney, Australia
ISBN (Print)9781424427178
Publication statusPublished - 2008
EventExperimental and numerical investigation of the electrical characteristics of vertical n-p junction diodes created by Si implantation into p-GaN - Sydney, Australia
Duration: 1 Jan 2008 → …

Conference

ConferenceExperimental and numerical investigation of the electrical characteristics of vertical n-p junction diodes created by Si implantation into p-GaN
Period1/01/08 → …

Cite this