Experimental and numerical investigation of the electrical characteristics of vertical n-p junction diodes created by Si implantation into p-GaN

A. Baharin; Martin Kocan; Gilberto A. Umana Membreno; U. Mishra; Giacinta Parish; Brett Nener

Experimental and numerical investigation of the electrical characteristics of vertical n-p junction diodes created by Si implantation into p-GaN

A. Baharin, Martin Kocan, Gilberto A. Umana Membreno, U. Mishra, Giacinta Parish, Brett Nener

Graduate Research School

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Original language	English
Title of host publication	Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices
Editors	Lorenzo Faraone, Michael Cortie, Andres Cuevas, John Dell, Chennupati Jagadish, Martin Kocan, Barry Luther-Davies, Mari
Place of Publication	USA
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	12-15
Volume	CD-ROM
Edition	Sydney, Australia
ISBN (Print)	9781424427178
Publication status	Published - 2008
Event	Experimental and numerical investigation of the electrical characteristics of vertical n-p junction diodes created by Si implantation into p-GaN - Sydney, Australia Duration: 1 Jan 2008 → …

Conference

Conference	Experimental and numerical investigation of the electrical characteristics of vertical n-p junction diodes created by Si implantation into p-GaN
Period	1/01/08 → …

Cite this

Baharin, A., Kocan, M., Umana Membreno, G. A., Mishra, U., Parish, G., & Nener, B. (2008). Experimental and numerical investigation of the electrical characteristics of vertical n-p junction diodes created by Si implantation into p-GaN. In L. Faraone, M. Cortie, A. Cuevas, J. Dell, C. Jagadish, M. Kocan, B. Luther-Davies, & Mari (Eds.), Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (Sydney, Australia ed., Vol. CD-ROM, pp. 12-15). IEEE, Institute of Electrical and Electronics Engineers.

Baharin, A. ; Kocan, Martin ; Umana Membreno, Gilberto A. et al. / Experimental and numerical investigation of the electrical characteristics of vertical n-p junction diodes created by Si implantation into p-GaN. Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices. editor / Lorenzo Faraone ; Michael Cortie ; Andres Cuevas ; John Dell ; Chennupati Jagadish ; Martin Kocan ; Barry Luther-Davies ; Mari. Vol. CD-ROM Sydney, Australia. ed. USA : IEEE, Institute of Electrical and Electronics Engineers, 2008. pp. 12-15

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title = "Experimental and numerical investigation of the electrical characteristics of vertical n-p junction diodes created by Si implantation into p-GaN",

author = "A. Baharin and Martin Kocan and {Umana Membreno}, {Gilberto A.} and U. Mishra and Giacinta Parish and Brett Nener",

year = "2008",

language = "English",

isbn = "9781424427178",

volume = "CD-ROM",

pages = "12--15",

editor = "Lorenzo Faraone and Michael Cortie and Andres Cuevas and John Dell and Chennupati Jagadish and Martin Kocan and Barry Luther-Davies and Mari",

booktitle = "Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States",

edition = "Sydney, Australia",

note = "Experimental and numerical investigation of the electrical characteristics of vertical n-p junction diodes created by Si implantation into p-GaN ; Conference date: 01-01-2008",

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Baharin, A, Kocan, M, Umana Membreno, GA, Mishra, U, Parish, G & Nener, B 2008, Experimental and numerical investigation of the electrical characteristics of vertical n-p junction diodes created by Si implantation into p-GaN. in L Faraone, M Cortie, A Cuevas, J Dell, C Jagadish, M Kocan, B Luther-Davies & Mari (eds), Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices. Sydney, Australia edn, vol. CD-ROM, IEEE, Institute of Electrical and Electronics Engineers, USA, pp. 12-15, Experimental and numerical investigation of the electrical characteristics of vertical n-p junction diodes created by Si implantation into p-GaN, 1/01/08.

Experimental and numerical investigation of the electrical characteristics of vertical n-p junction diodes created by Si implantation into p-GaN. / Baharin, A.; Kocan, Martin; Umana Membreno, Gilberto A. et al.
Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices. ed. / Lorenzo Faraone; Michael Cortie; Andres Cuevas; John Dell; Chennupati Jagadish; Martin Kocan; Barry Luther-Davies; Mari. Vol. CD-ROM Sydney, Australia. ed. USA: IEEE, Institute of Electrical and Electronics Engineers, 2008. p. 12-15.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Experimental and numerical investigation of the electrical characteristics of vertical n-p junction diodes created by Si implantation into p-GaN

AU - Baharin, A.

AU - Kocan, Martin

AU - Umana Membreno, Gilberto A.

AU - Mishra, U.

AU - Parish, Giacinta

AU - Nener, Brett

PY - 2008

Y1 - 2008

M3 - Conference paper

SN - 9781424427178

VL - CD-ROM

SP - 12

EP - 15

BT - Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices

A2 - Faraone, Lorenzo

A2 - Cortie, Michael

A2 - Cuevas, Andres

A2 - Dell, John

A2 - Jagadish, Chennupati

A2 - Kocan, Martin

A2 - Luther-Davies, Barry

A2 - Mari, null

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - USA

T2 - Experimental and numerical investigation of the electrical characteristics of vertical n-p junction diodes created by Si implantation into p-GaN

Y2 - 1 January 2008

ER -

Baharin A, Kocan M, Umana Membreno GA, Mishra U, Parish G , Nener B. Experimental and numerical investigation of the electrical characteristics of vertical n-p junction diodes created by Si implantation into p-GaN. In Faraone L, Cortie M, Cuevas A, Dell J, Jagadish C, Kocan M, Luther-Davies B, Mari, editors, Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices. Sydney, Australia ed. Vol. CD-ROM. USA: IEEE, Institute of Electrical and Electronics Engineers. 2008. p. 12-15