Evidence of Carrier Localization in AlGaN/GaN-Based UV Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging

Mei Cui; Wei Guo; Houqiang Xu; Jie'an Jiang; Li Chen; Somak Mitra; Iman S. Roqan; Haibo Jiang; Xiaohang Li; Jichun Ye

doi:10.1002/pssr.202100035

Evidence of Carrier Localization in AlGaN/GaN-Based UV Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging

Mei Cui, Wei Guo, Houqiang Xu, Jie'an Jiang, Li Chen, Somak Mitra, Iman S. Roqan, Haibo Jiang, Xiaohang Li, Jichun Ye

School of Molecular Sciences

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

AlGaN-based multiple quantum wells (MQWs) incorporating opposite polarity domains are grown by metal–organic chemical vapor deposition (MOCVD). A direct demonstration of the carrier localization effect is provided by a combination analysis of space-resolved luminescence peak position and Ga/Al composition distribution. Furthermore, through Raman spectroscopy, it is found that compressive strain plays a key role in improving the optical properties of UV-MQWs despite the inferior crystalline quality in the N-polar domains. This suggests that incorporating sub-micrometer-scale polarity domains in the MQWs is promising for the development of efficient UV emitters.

Original language	English
Journal	Physica Status Solidi - Rapid Research Letters
DOIs	https://doi.org/10.1002/pssr.202100035
Publication status	E-pub ahead of print - 25 Feb 2021

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title = "Evidence of Carrier Localization in AlGaN/GaN-Based UV Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging",

abstract = "AlGaN-based multiple quantum wells (MQWs) incorporating opposite polarity domains are grown by metal–organic chemical vapor deposition (MOCVD). A direct demonstration of the carrier localization effect is provided by a combination analysis of space-resolved luminescence peak position and Ga/Al composition distribution. Furthermore, through Raman spectroscopy, it is found that compressive strain plays a key role in improving the optical properties of UV-MQWs despite the inferior crystalline quality in the N-polar domains. This suggests that incorporating sub-micrometer-scale polarity domains in the MQWs is promising for the development of efficient UV emitters.",

keywords = "carrier localization, nanoscale imaging, polarity control, UV emitters",

author = "Mei Cui and Wei Guo and Houqiang Xu and Jie'an Jiang and Li Chen and Somak Mitra and Roqan, {Iman S.} and Haibo Jiang and Xiaohang Li and Jichun Ye",

year = "2021",

month = feb,

day = "25",

doi = "10.1002/pssr.202100035",

language = "English",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag GmbH & Co. KGaA",

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TY - JOUR

T1 - Evidence of Carrier Localization in AlGaN/GaN-Based UV Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging

AU - Cui, Mei

AU - Guo, Wei

AU - Xu, Houqiang

AU - Jiang, Jie'an

AU - Chen, Li

AU - Mitra, Somak

AU - Roqan, Iman S.

AU - Jiang, Haibo

AU - Li, Xiaohang

AU - Ye, Jichun

PY - 2021/2/25

Y1 - 2021/2/25

N2 - AlGaN-based multiple quantum wells (MQWs) incorporating opposite polarity domains are grown by metal–organic chemical vapor deposition (MOCVD). A direct demonstration of the carrier localization effect is provided by a combination analysis of space-resolved luminescence peak position and Ga/Al composition distribution. Furthermore, through Raman spectroscopy, it is found that compressive strain plays a key role in improving the optical properties of UV-MQWs despite the inferior crystalline quality in the N-polar domains. This suggests that incorporating sub-micrometer-scale polarity domains in the MQWs is promising for the development of efficient UV emitters.

AB - AlGaN-based multiple quantum wells (MQWs) incorporating opposite polarity domains are grown by metal–organic chemical vapor deposition (MOCVD). A direct demonstration of the carrier localization effect is provided by a combination analysis of space-resolved luminescence peak position and Ga/Al composition distribution. Furthermore, through Raman spectroscopy, it is found that compressive strain plays a key role in improving the optical properties of UV-MQWs despite the inferior crystalline quality in the N-polar domains. This suggests that incorporating sub-micrometer-scale polarity domains in the MQWs is promising for the development of efficient UV emitters.

KW - carrier localization

KW - nanoscale imaging

KW - polarity control

KW - UV emitters

UR - http://www.scopus.com/inward/record.url?scp=85102464311&partnerID=8YFLogxK

U2 - 10.1002/pssr.202100035

DO - 10.1002/pssr.202100035

M3 - Article

AN - SCOPUS:85102464311

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

SN - 1862-6254

ER -

Evidence of Carrier Localization in AlGaN/GaN-Based UV Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging

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