Estimation of doping density in HgCdTe p-n junctions using scanning laser microscopy

J.F. Siliquini; John Dell; Charles Musca; E.P.G Smith; Lorenzo Faraone; J. Piotrowski

doi:10.1063/1.120642

Estimation of doping density in HgCdTe p-n junctions using scanning laser microscopy

J.F. Siliquini, John Dell, Charles Musca, E.P.G Smith, Lorenzo Faraone, J. Piotrowski

Graduate Research School

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Abstract

Quantitative assessment of p-to n-type conversion due to reactive ion etching (RTE) of p-type Hg0.71Cd0.29Te is presented using laser-beam-induced-current (LBIC) measurements. For the RIE processing conditions used (340 mT, CH4/H-2, 0.4 W/cm(2)), n-type conversion was observed in extrinsic arsenic-doped p-type Hg0.71Cd0.29Te which had previously undergone a Hg anneal to eliminate Hg vacancies. Effective doping density of the n-type converted region is determined by fitting a theoretically determined LBIC signature to the measured LBIC signal over a temperature range 80-300 K. Effective n-type doping density is the only fitting parameter used in the simulation, which was carried out using a commercial semiconductor device modeling package (SEMICAD(TM) DEVICE). This noncontact experimental technique promises to be a useful tool in the characterization of p-n junction diodes in HgCdTe, and for studying the precise nature of p to n conversion in p-type HgCdTe. (C) 1998 American Institute of Physics.

Original language	English
Pages (from-to)	C1
Journal	Applied Physics Letters
Volume	72
Issue number	52-54
DOIs	https://doi.org/10.1063/1.120642
Publication status	Published - 1998

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title = "Estimation of doping density in HgCdTe p-n junctions using scanning laser microscopy",

abstract = "Quantitative assessment of p-to n-type conversion due to reactive ion etching (RTE) of p-type Hg0.71Cd0.29Te is presented using laser-beam-induced-current (LBIC) measurements. For the RIE processing conditions used (340 mT, CH4/H-2, 0.4 W/cm(2)), n-type conversion was observed in extrinsic arsenic-doped p-type Hg0.71Cd0.29Te which had previously undergone a Hg anneal to eliminate Hg vacancies. Effective doping density of the n-type converted region is determined by fitting a theoretically determined LBIC signature to the measured LBIC signal over a temperature range 80-300 K. Effective n-type doping density is the only fitting parameter used in the simulation, which was carried out using a commercial semiconductor device modeling package (SEMICAD(TM) DEVICE). This noncontact experimental technique promises to be a useful tool in the characterization of p-n junction diodes in HgCdTe, and for studying the precise nature of p to n conversion in p-type HgCdTe. (C) 1998 American Institute of Physics.",

author = "J.F. Siliquini and John Dell and Charles Musca and E.P.G Smith and Lorenzo Faraone and J. Piotrowski",

year = "1998",

doi = "10.1063/1.120642",

language = "English",

volume = "72",

pages = "C1",

journal = "Applied Physics Letters",

publisher = "American Institute of Physics",

number = "52-54",

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TY - JOUR

T1 - Estimation of doping density in HgCdTe p-n junctions using scanning laser microscopy

AU - Siliquini, J.F.

AU - Dell, John

AU - Musca, Charles

AU - Smith, E.P.G

AU - Faraone, Lorenzo

AU - Piotrowski, J.

PY - 1998

Y1 - 1998

N2 - Quantitative assessment of p-to n-type conversion due to reactive ion etching (RTE) of p-type Hg0.71Cd0.29Te is presented using laser-beam-induced-current (LBIC) measurements. For the RIE processing conditions used (340 mT, CH4/H-2, 0.4 W/cm(2)), n-type conversion was observed in extrinsic arsenic-doped p-type Hg0.71Cd0.29Te which had previously undergone a Hg anneal to eliminate Hg vacancies. Effective doping density of the n-type converted region is determined by fitting a theoretically determined LBIC signature to the measured LBIC signal over a temperature range 80-300 K. Effective n-type doping density is the only fitting parameter used in the simulation, which was carried out using a commercial semiconductor device modeling package (SEMICAD(TM) DEVICE). This noncontact experimental technique promises to be a useful tool in the characterization of p-n junction diodes in HgCdTe, and for studying the precise nature of p to n conversion in p-type HgCdTe. (C) 1998 American Institute of Physics.

AB - Quantitative assessment of p-to n-type conversion due to reactive ion etching (RTE) of p-type Hg0.71Cd0.29Te is presented using laser-beam-induced-current (LBIC) measurements. For the RIE processing conditions used (340 mT, CH4/H-2, 0.4 W/cm(2)), n-type conversion was observed in extrinsic arsenic-doped p-type Hg0.71Cd0.29Te which had previously undergone a Hg anneal to eliminate Hg vacancies. Effective doping density of the n-type converted region is determined by fitting a theoretically determined LBIC signature to the measured LBIC signal over a temperature range 80-300 K. Effective n-type doping density is the only fitting parameter used in the simulation, which was carried out using a commercial semiconductor device modeling package (SEMICAD(TM) DEVICE). This noncontact experimental technique promises to be a useful tool in the characterization of p-n junction diodes in HgCdTe, and for studying the precise nature of p to n conversion in p-type HgCdTe. (C) 1998 American Institute of Physics.

U2 - 10.1063/1.120642

DO - 10.1063/1.120642

M3 - Article

VL - 72

SP - C1

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 52-54

ER -

Estimation of doping density in HgCdTe p-n junctions using scanning laser microscopy

Abstract

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