Er2O3 as a high-K dielectric candidate

M. Losurdo, M.M. Giangregorio, G. Bruno, D. Yang, E.A. Irene, Alexandra Suvorova, Martin Saunders

Research output: Contribution to journalArticlepeer-review

57 Citations (Scopus)


Erbium oxide (Er2O3) films have been deposited by metal organic chemical vapor deposition on Si(001) using tris(isopropylcyclopentadienyl)erbium. The impact of Si surface passivation by the metal organic prior growth initiation was investigated. The correlation between the Er2O3 films structure, the optical response, the static dielectric constant (K), and density of interface traps is discussed. An Er-silicate interfacial layer with a thickness of 1.5 nm, a static dielectric constant of 10-12.4, and a density of interface traps of 4.2x10(10) cm(2) eV(-1) measured for a film with a physical thickness of 8.2 nm (with an equivalent oxide thickness of 2.7 nm) render Er2O3 an interesting candidate as a high-K dielectric.(c) 2007 American Institute of Physics.
Original languageEnglish
Pages (from-to)091914-1-091914-3
JournalApplied Physics Letters
Issue number9
Publication statusPublished - 2007


Dive into the research topics of 'Er2O3 as a high-K dielectric candidate'. Together they form a unique fingerprint.

Cite this