Enriched residual free bubbles for semiconductor device simulation

R. N. Simpson, S. P A Bordas, A. Asenov, A. R. Brown

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

This article outlines a method for stabilising the current continuity equations which are used for semiconductor device simulation. Residual-free bubble functions (RfBF) are incorporated into a finite element (FE) implementation that are able to prevent oscillations which are seen when using the conventional Bubnov-Galerkin FE implementation. In addition, it is shown that the RfBF are able to provide stabilisation with very distorted meshes and curved interface boundaries. Comparison with the commonly used SUPG scheme is made throughout, showing that in the case of 2D problems the RfBF allow faster convergence of the coupled semiconductor device equations, especially in the case of distorted meshes.

Original languageEnglish
Pages (from-to)119-133
Number of pages15
JournalComputational Mechanics
Volume50
Issue number1
DOIs
Publication statusPublished - Jul 2012
Externally publishedYes

Fingerprint

Dive into the research topics of 'Enriched residual free bubbles for semiconductor device simulation'. Together they form a unique fingerprint.

Cite this