@inproceedings{474f636a148a43c784497e308f867795,
title = "Enhanced intermixing in anion and cation sublattices of low-temperature grown GaAs",
abstract = "Compositional intermixing was studied by transmission electron microscopy of low-temperature (LT) grown GaAs films delta-doped with isovalent In and Sb impurities. The diffusion was found to be enhanced on both anion and cation sublattices of LT GaAs when compared to that for conventional stoichiometric material. The phenomenon seems to be a result of high concentration of excess-arsenic-related point defects. These are gallium vacancies mediating diffusion on gallium sublattice and arsenic interstitials assisting diffusion on arsenic sublattice. The effective In-Ga and Sb-As interdiffusion coefficients and their activation energies have been determined.",
keywords = "Annealing, Crystallization, Gallium arsenide, III-V semiconductor materials, Molecular beam epitaxial growth, Optical films, Substrates, Superlattices, Temperature, Transmission electron microscopy",
author = "Chaldyshev, {V. V.} and Bert, {N. A.} and Musikhin, {Yu G.} and Suvorova, {A. A.} and Preobrazhenskii, {V. V.} and Putyato, {M. A.} and Semyagin, {B. R.} and P. Werner",
year = "2000",
doi = "10.1109/SIM.2000.939210",
language = "English",
series = "IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC",
publisher = "IEEE, Institute of Electrical and Electronics Engineers",
pages = "121--124",
editor = "Welham, {N. J.} and C. Jagadish",
booktitle = "2000 International Semiconducting and Insulating Materials Conference, SIMC 2000",
address = "United States",
note = "11th International Semiconducting and Insulating Materials Conference, SIMC 2000 ; Conference date: 03-07-2000 Through 07-07-2000",
}