Enhanced diffusion of high-temperature implanted aluminum in silicon carbide

A. V. Suvorov; I. O. Usov; V. V. Sokolov; A. A. Suvorova

Enhanced diffusion of high-temperature implanted aluminum in silicon carbide

A. V. Suvorov, I. O. Usov, V. V. Sokolov, A. A. Suvorova

Research output: Contribution to journal › Conference article › peer-review

Abstract

The diffusion of aluminum in silicon carbide during high-temperature Al⁺ ion implantation was studied using secondary ion mass spectrometry (SIMS). Transmission electron microscopy (TEM) has been used to determine the microstructure of the implanted sample. A 6H-SiC wafer was implanted at a temperature of 1800 °C with 40 keV Al ions to a dose of 2 × 10¹⁶ cm^-2. It was established that an Al step-like profile starts at the interface between the crystal region and the damaged layer. The radiation enhanced diffusion coefficient of Al at the interface was determined to be D_i = 2.8 × 10^-12 cm₂/s, about two orders of magnitude higher than the thermally activated diffusion coefficient. The Si vacancy-rich near-surface layer formed by this implantation condition is believed to play a significant role in enhanced Al diffusion.

Original language	English
Pages (from-to)	239-242
Number of pages	4
Journal	Materials Research Society Symposium - Proceedings
Volume	396
Publication status	Published - 1996
Externally published	Yes

Cite this

@article{2748080b50354e0d8710c03e2e631c39,

title = "Enhanced diffusion of high-temperature implanted aluminum in silicon carbide",

abstract = "The diffusion of aluminum in silicon carbide during high-temperature Al+ ion implantation was studied using secondary ion mass spectrometry (SIMS). Transmission electron microscopy (TEM) has been used to determine the microstructure of the implanted sample. A 6H-SiC wafer was implanted at a temperature of 1800 °C with 40 keV Al ions to a dose of 2 × 1016 cm-2. It was established that an Al step-like profile starts at the interface between the crystal region and the damaged layer. The radiation enhanced diffusion coefficient of Al at the interface was determined to be Di = 2.8 × 10-12 cm2/s, about two orders of magnitude higher than the thermally activated diffusion coefficient. The Si vacancy-rich near-surface layer formed by this implantation condition is believed to play a significant role in enhanced Al diffusion.",

author = "Suvorov, \{A. V.\} and Usov, \{I. O.\} and Sokolov, \{V. V.\} and Suvorova, \{A. A.\}",

year = "1996",

language = "English",

volume = "396",

pages = "239--242",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Enhanced diffusion of high-temperature implanted aluminum in silicon carbide

AU - Suvorov, A. V.

AU - Usov, I. O.

AU - Sokolov, V. V.

AU - Suvorova, A. A.

PY - 1996

Y1 - 1996

N2 - The diffusion of aluminum in silicon carbide during high-temperature Al+ ion implantation was studied using secondary ion mass spectrometry (SIMS). Transmission electron microscopy (TEM) has been used to determine the microstructure of the implanted sample. A 6H-SiC wafer was implanted at a temperature of 1800 °C with 40 keV Al ions to a dose of 2 × 1016 cm-2. It was established that an Al step-like profile starts at the interface between the crystal region and the damaged layer. The radiation enhanced diffusion coefficient of Al at the interface was determined to be Di = 2.8 × 10-12 cm2/s, about two orders of magnitude higher than the thermally activated diffusion coefficient. The Si vacancy-rich near-surface layer formed by this implantation condition is believed to play a significant role in enhanced Al diffusion.

AB - The diffusion of aluminum in silicon carbide during high-temperature Al+ ion implantation was studied using secondary ion mass spectrometry (SIMS). Transmission electron microscopy (TEM) has been used to determine the microstructure of the implanted sample. A 6H-SiC wafer was implanted at a temperature of 1800 °C with 40 keV Al ions to a dose of 2 × 1016 cm-2. It was established that an Al step-like profile starts at the interface between the crystal region and the damaged layer. The radiation enhanced diffusion coefficient of Al at the interface was determined to be Di = 2.8 × 10-12 cm2/s, about two orders of magnitude higher than the thermally activated diffusion coefficient. The Si vacancy-rich near-surface layer formed by this implantation condition is believed to play a significant role in enhanced Al diffusion.

UR - https://www.scopus.com/pages/publications/0029705605

M3 - Conference article

AN - SCOPUS:0029705605

SN - 0272-9172

VL - 396

SP - 239

EP - 242

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

Enhanced diffusion of high-temperature implanted aluminum in silicon carbide

Abstract

Other files and links

Fingerprint

Cite this