Enhanced diffusion of high-temperature implanted aluminum in silicon carbide

A. V. Suvorov, I. O. Usov, V. V. Sokolov, A. A. Suvorova

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10 Citations (Scopus)


The diffusion of aluminum in silicon carbide during high-temperature Al+ ion implantation was studied using secondary ion mass spectrometry (SIMS). Transmission electron microscopy (TEM) has been used to determine the microstructure of the implanted sample. A 6H-SiC wafer was implanted at a temperature of 1800 °C with 40 keV Al ions to a dose of 2 × 1016 cm-2. It was established that an Al step-like profile starts at the interface between the crystal region and the damaged layer. The radiation enhanced diffusion coefficient of Al at the interface was determined to be Di = 2.8 × 10-12 cm2/s, about two orders of magnitude higher than the thermally activated diffusion coefficient. The Si vacancy-rich near-surface layer formed by this implantation condition is believed to play a significant role in enhanced Al diffusion.

Original languageEnglish
Pages (from-to)239-242
Number of pages4
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1996
Externally publishedYes


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