Engineering porous silicon thin films to obtain high TCR and low 1/f noise for application in thermal detectors

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Abstract

This paper reviews the temperature coefficient of resistance (TCR) and 1/f noise characteristics in porous silicon, to explore its possible application as a sensing element in high sensitivity based uncooled thermal detectors. These electrical characteristics are key parameters determining the sensitivity of thermal imaging cameras. Engineering the electrical properties of porous silicon thin films to improve the sensitivity of thermal detectors would significantly improve imaging quality compared to current night vision systems in automobiles, surveillance and industrial monitoring applications.

Original languageEnglish
Title of host publication2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018
Place of PublicationUSA
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages31-34
Number of pages4
ISBN (Electronic)9781538695241
ISBN (Print)978-1-5386-9525-8
DOIs
Publication statusPublished - 14 May 2019
Event2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018 - Perth, Australia
Duration: 9 Dec 201813 Dec 2018

Publication series

Name2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018

Conference

Conference2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018
CountryAustralia
CityPerth
Period9/12/1813/12/18

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