Engineering porous silicon thin films to obtain high TCR and low 1/f noise for application in thermal detectors

Research output: Chapter in Book/Conference paperConference paper

Abstract

This paper reviews the temperature coefficient of resistance (TCR) and 1/f noise characteristics in porous silicon, to explore its possible application as a sensing element in high sensitivity based uncooled thermal detectors. These electrical characteristics are key parameters determining the sensitivity of thermal imaging cameras. Engineering the electrical properties of porous silicon thin films to improve the sensitivity of thermal detectors would significantly improve imaging quality compared to current night vision systems in automobiles, surveillance and industrial monitoring applications.

Original languageEnglish
Title of host publication2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018
Place of PublicationUSA
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages31-34
Number of pages4
ISBN (Electronic)9781538695241
ISBN (Print)978-1-5386-9525-8
DOIs
Publication statusPublished - 14 May 2019
Event2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018 - Perth, Australia
Duration: 9 Dec 201813 Dec 2018

Publication series

Name2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018

Conference

Conference2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018
CountryAustralia
CityPerth
Period9/12/1813/12/18

Fingerprint

Porous silicon
porous silicon
engineering
Detectors
Thin films
sensitivity
detectors
Infrared imaging
coefficients
thin films
Automobiles
night vision
Electric properties
Cameras
automobiles
surveillance
Imaging techniques
Temperature
Monitoring
cameras

Cite this

Sharma, P., Sun, X., Parish, G., & Keating, A. (2019). Engineering porous silicon thin films to obtain high TCR and low 1/f noise for application in thermal detectors. In 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018 (pp. 31-34). [8715243] (2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018). USA: IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/COMMAD.2018.8715243
Sharma, Pritam ; Sun, Xiao ; Parish, Giacinta ; Keating, Adrian. / Engineering porous silicon thin films to obtain high TCR and low 1/f noise for application in thermal detectors. 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018. USA : IEEE, Institute of Electrical and Electronics Engineers, 2019. pp. 31-34 (2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018).
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abstract = "This paper reviews the temperature coefficient of resistance (TCR) and 1/f noise characteristics in porous silicon, to explore its possible application as a sensing element in high sensitivity based uncooled thermal detectors. These electrical characteristics are key parameters determining the sensitivity of thermal imaging cameras. Engineering the electrical properties of porous silicon thin films to improve the sensitivity of thermal detectors would significantly improve imaging quality compared to current night vision systems in automobiles, surveillance and industrial monitoring applications.",
author = "Pritam Sharma and Xiao Sun and Giacinta Parish and Adrian Keating",
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language = "English",
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series = "2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018",
publisher = "IEEE, Institute of Electrical and Electronics Engineers",
pages = "31--34",
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Sharma, P, Sun, X, Parish, G & Keating, A 2019, Engineering porous silicon thin films to obtain high TCR and low 1/f noise for application in thermal detectors. in 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018., 8715243, 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018, IEEE, Institute of Electrical and Electronics Engineers, USA, pp. 31-34, 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018, Perth, Australia, 9/12/18. https://doi.org/10.1109/COMMAD.2018.8715243

Engineering porous silicon thin films to obtain high TCR and low 1/f noise for application in thermal detectors. / Sharma, Pritam; Sun, Xiao; Parish, Giacinta; Keating, Adrian.

2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018. USA : IEEE, Institute of Electrical and Electronics Engineers, 2019. p. 31-34 8715243 (2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018).

Research output: Chapter in Book/Conference paperConference paper

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T3 - 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018

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Sharma P, Sun X, Parish G, Keating A. Engineering porous silicon thin films to obtain high TCR and low 1/f noise for application in thermal detectors. In 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018. USA: IEEE, Institute of Electrical and Electronics Engineers. 2019. p. 31-34. 8715243. (2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018). https://doi.org/10.1109/COMMAD.2018.8715243