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Abstract
The sensitivity of present-day thermal sensors operating in the long-wave infrared region, a critical range for night vision and other reconnaissance applications, is limited by the 1/f noise in the thermistor material, while their widespread applicability is restricted due to microfabrication incompatibilities with the standard processing for silicon-based microelectronics. Porous silicon films have a high temperature coefficient of resistance (TCR~2–10%K−1) and are compatible with microfabrication processes, making them suitable candidates for use in thermal sensors. In this work, the 1/f noise in porous silicon films in conjunction with TCR, both key parameters for high sensitivity thermal sensors are characterized. The inherent 1/f noise in these as-fabricated films is very high and increases significantly after exposure to atmosphere (oxidation). However, surface passivation at 600 °C, stabilises the film against atmospheric oxidation and reduces the 1/f noise level by orders of magnitude. Further, decreasing the porosity of passivated films from 90 to 40% decreased the 1/f noise by an order of magnitude. High TCR~6–7%K−1 along with low 1/f noise constant, K~10- 12 are obtainable with an optimised porosity~60–75% for films surface passivated at 600 °C. These results confirm great promise of porous silicon for low manufacturing cost, and higher sensitivity of the thermal sensors.
Original language | English |
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Article number | 111302 |
Journal | Microporous and Mesoporous Materials |
Volume | 324 |
DOIs | |
Publication status | Published - Sept 2021 |
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- 1 Finished
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A new technology platform for high speed, high sensitivity thermal imaging
Keating, A. (Investigator 01), Parish, G. (Investigator 02), Dell, J. (Investigator 03) & Andrews, G. (Investigator 04)
ARC Australian Research Council
1/01/17 → 30/04/20
Project: Research